Win Source Part Number: 1345974-MMRF1007HSR5
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Package: Tape & Reel
Standard Package: 50
Voltage - Rated: 110 V
Technology: LDMOS
Frequency: 1.03GHz
Configuration: Dual
Current - Test: 150 mA
Gain: 20dB
Voltage - Test: 50 V
Power - Output: 1000W
Package / Case: NI-1230-4S
Supplier Device Package: NI-1230-4S
ECCN: EAR99
Fake Threat In the Open Market: 38 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: NXP USA Inc.
Base Product Number: MMRF1007
N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
RF MOSFET LDMOS 50V NI1230
| Win Source Electronics | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF MOSFET Transistors | RF Transistors | RF Transistors |
| Product Number | 1345974-MMRF1007HSR5 | MMRF1007HSR5 | MMRF1007HSR5 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Output Power | 1000 watts | 1000 watts |
