NXP Semiconductors RF Power Transistor MMRF1007HSR5

Description
N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
  • RF Power Transistor - MMRF1007HSR5 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs - 1345974-MMRF1007HSR5 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MMRF1007HSR5 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MMRF1007HSR5
RF Power Transistor MMRF1007HSR5
N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.

N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs - 1345974-MMRF1007HSR5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
1345974-MMRF1007HSR5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs 1345974-MMRF1007HSR5
Win Source Part Number: 1345974-MMRF1007HSR5 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Package: Tape & Reel Standard Package: 50 Voltage - Rated: 110 V Technology: LDMOS Frequency: 1.03GHz Configuration: Dual Current - Test: 150 mA Gain: 20dB Voltage - Test: 50 V Power - Output: 1000W Package / Case: NI-1230-4S Supplier Device Package: NI-1230-4S ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: NXP USA Inc. Base Product Number: MMRF1007

Win Source Part Number: 1345974-MMRF1007HSR5
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Package: Tape & Reel
Standard Package: 50
Voltage - Rated: 110 V
Technology: LDMOS
Frequency: 1.03GHz
Configuration: Dual
Current - Test: 150 mA
Gain: 20dB
Voltage - Test: 50 V
Power - Output: 1000W
Package / Case: NI-1230-4S
Supplier Device Package: NI-1230-4S
ECCN: EAR99
Fake Threat In the Open Market: 38 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: NXP USA Inc.
Base Product Number: MMRF1007

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMRF1007HSR5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMRF1007HSR5
RF MOSFET LDMOS 50V NI1230

RF MOSFET LDMOS 50V NI1230

Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors RF MOSFET Transistors RF Transistors
Product Number MMRF1007HSR5 1345974-MMRF1007HSR5 MMRF1007HSR5
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Ceramic Flangeless SOT3 NI-1230-4S
Unlock Full Specs
to access all available technical data