Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules MSCGLQ50A120CTBL1NG

Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very low stray inductance Ultra-low weight and profile Kelvin emitter for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance Low profile RoHS compliant Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Applications High reliability power systems High efficiency AC/DC and DC/AC converters Motor control

IGBT MODULE 1200V 110A 375W