The GRF5923 is a dual 30 Watt GaN-on-SiC HEMT power transistor designed for broadband operation from near DC to 6 GHz in applications such as 4G/5G drivers, radar, and military communications. It is housed in a 4 x 4 mm QFN-24 surface mount package and operates with a drain voltage of 50 V, delivering 30 W saturated output power per side at 50% pulsed drain efficiency. The device supports a pulsed large signal gain of 14 dB and is rated for an operating package base temperature range of -40 to 150 °C with a maximum junction temperature of 220 °C. The package is RoHS compliant and meets MSL 1 moisture sensitivity requirements.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GRF5923 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
