Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCGLQ50X065CTYZBNMG

Description
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
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Description
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
Request a Quote
Datasheet
Datasheet Summary
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The MSCGLQ50X065CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module integrating silicon carbide Schottky diodes and IGBT4 switches in an isolated package with direct heatsink mounting. It measures 150 g in weight and features an AlSiC base plate, Si3N4 substrate, and internal PTC thermistor for temperature monitoring. The module supports operating junction temperatures from -55°C to 175°C and storage temperatures from -60°C to 125°C, with 4000 V RMS isolation between any terminal and the case. It meets RoHS compliance and is designed for high-reliability applications in electro-mechanical and electro-hydrostatic actuator systems.

Datasheet Summary
Powered by GS/AI

The MSCGLQ50X065CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module integrating silicon carbide Schottky diodes and IGBT4 switches in an isolated package with direct heatsink mounting. It measures 150 g in weight and features an AlSiC base plate, Si3N4 substrate, and internal PTC thermistor for temperature monitoring. The module supports operating junction temperatures from -55°C to 175°C and storage temperatures from -60°C to 125°C, with 4000 V RMS isolation between any terminal and the case. It meets RoHS compliance and is designed for high-reliability applications in electro-mechanical and electro-hydrostatic actuator systems.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCGLQ50X065CTYZBNMG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCGLQ50X065CTYZBNMG
Silicon Carbide MOSFET Modules MSCGLQ50X065CTYZBNMG
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)

Features

  • SiC Schottky Diode
  • IGBT4
  • Low stray inductance
  • Lead frames for power connections
  • SI3N4 substrate for improved thermal performance
  • AlSiC base plate for extended reliability and reduced weight
  • Extended storage temperature range
  • Internal thermistor for temperature monitoring

Benefits

  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
  • High reliability Power Core Module (PCM)
  • Modular power module for Power Drive Electronic (PDE)
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSCGLQ50X065CTYZBNMG
Product Name Silicon Carbide MOSFET Modules
Package Type HPD
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