Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products-Transistors
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Base Product Number: MSC017
Features
Benefits
Applications
MOSFET SIC 1200V 17 MOHM SOT-227 Product overview: MSC017SMA120J from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 17 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 17 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC017SMA120J can be used for catalog matching and distributor lookup.
MOSFET SIC 1200V 17 MOHM SOT-227
MOSFET SIC 1200V 17 MOHM SOT-227
| DigiKey | Win Source Electronics | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 150-MSC017SMA120J-ND | MSC017SMA120J | 278-MSC017SMA120J | MSC017SMA120J | MSC017SMA120J | |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Silicon Carbide MOSFETs | 1200V 17 MOHM MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | SOT3 | SOT-227 | Bulk | SOT-227 | ||
| rDS(on) | 0.0176 ohms | |||||
| PD | 278 milliwatts | 278000 milliwatts |