MOSFET SIC 1200V 17 MOHM SOT-227
Features
Benefits
Applications
MOSFET SIC 1200V 17 MOHM SOT-227 Product overview: MSC017SMA120J from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 17 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 17 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC017SMA120J can be used for catalog matching and distributor lookup.
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products-Transistors
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Base Product Number: MSC017
MOSFET SIC 1200V 17 MOHM SOT-227
| ODG (Origin Data Global) | DigiKey | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | MSC017SMA120J | 150-MSC017SMA120J-ND | MSC017SMA120J | 278-MSC017SMA120J | MSC017SMA120J | |
| Product Name | FET, MOSFET Arrays | Single FETs, MOSFETs | Silicon Carbide MOSFETs | 1200V 17 MOHM MOSFET Transistor | Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 1200 volts | |||||
| IDSS | 88000 milliamps | |||||
| PD | 278000 milliwatts | 278 milliwatts |