Microchip Technology, Inc. Silicon Carbide MOSFETs MSC017SMA120J

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Isolated voltage to 2500 V Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
  • Silicon Carbide MOSFETs - MSC017SMA120J - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - MSC017SMA120J - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 150-MSC017SMA120J-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Isolated voltage to 2500 V Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - MSC017SMA120J - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC017SMA120J
Silicon Carbide MOSFETs MSC017SMA120J
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Isolated voltage to 2500 V Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
  • Isolated voltage to 2500 V

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
FET, MOSFET Arrays - MSC017SMA120J - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
MSC017SMA120J
FET, MOSFET Arrays MSC017SMA120J
MOSFET SIC 1200V 17 MOHM SOT-227

MOSFET SIC 1200V 17 MOHM SOT-227

Supplier's Site Datasheet
Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Microchip Technology Category: Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs Package: Bulk Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Base Product Number: MSC017

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Base Product Number: MSC017

Buy Now Datasheet
Single FETs, MOSFETs - 150-MSC017SMA120J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC017SMA120J-ND
Single FETs, MOSFETs 150-MSC017SMA120J-ND
Mosfet Array

Mosfet Array

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC017SMA120J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC017SMA120J
MOSFET SIC 1200V 17 MOHM SOT-227

MOSFET SIC 1200V 17 MOHM SOT-227

Supplier's Site

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSC017SMA120J MSC017SMA120J 150-MSC017SMA120J-ND MSC017SMA120J
Product Name Silicon Carbide MOSFETs FET, MOSFET Arrays Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0176 ohms
Package Type SOT-227 SOT-227 SOT3
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
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