Microchip Technology, Inc. FET, MOSFET Arrays MSC017SMA120J

Description
MOSFET SIC 1200V 17 MOHM SOT-227
  • FET, MOSFET Arrays - MSC017SMA120J - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 150-MSC017SMA120J-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - MSC017SMA120J - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET SIC 1200V 17 MOHM SOT-227
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - MSC017SMA120J - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
MSC017SMA120J
FET, MOSFET Arrays MSC017SMA120J
MOSFET SIC 1200V 17 MOHM SOT-227

MOSFET SIC 1200V 17 MOHM SOT-227

Supplier's Site Datasheet
Single FETs, MOSFETs - 150-MSC017SMA120J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC017SMA120J-ND
Single FETs, MOSFETs 150-MSC017SMA120J-ND
Mosfet Array

Mosfet Array

Buy Now Datasheet
Silicon Carbide MOSFETs - MSC017SMA120J - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC017SMA120J
Silicon Carbide MOSFETs MSC017SMA120J
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Isolated voltage to 2500 V Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
  • Isolated voltage to 2500 V

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Microchip Technology Category: Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs Package: Bulk Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Base Product Number: MSC017

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Base Product Number: MSC017

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC017SMA120J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC017SMA120J
MOSFET SIC 1200V 17 MOHM SOT-227

MOSFET SIC 1200V 17 MOHM SOT-227

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Richardson RFPD Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC017SMA120J 150-MSC017SMA120J-ND MSC017SMA120J MSC017SMA120J
Product Name FET, MOSFET Arrays Single FETs, MOSFETs Silicon Carbide MOSFETs Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
IDSS 88000 milliamps
PD 278000 milliwatts
Unlock Full Specs
to access all available technical data