MACOM RF FETs, MOSFETs MRF173CQ

Description
FET RF 65V 150MHZ 316-01
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Description
FET RF 65V 150MHZ 316-01
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - MRF173CQ - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
MRF173CQ
RF FETs, MOSFETs MRF173CQ
FET RF 65V 150MHZ 316-01

FET RF 65V 150MHZ 316-01

Supplier's Site Datasheet
RF Power Transistor - MRF173CQ - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF173CQ
RF Power Transistor MRF173CQ
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MRF173CQ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MRF173CQ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MRF173CQ
RF MOSFET 28V 316-01

RF MOSFET 28V 316-01

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors RF MOSFET Transistors RF Transistors
Product Number MRF173CQ MRF173CQ MRF173CQ
Product Name RF FETs, MOSFETs RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET
Power Gain 13 dB 13 dB
Noise Figure 1.5 dB
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