The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120J device is a 1200 V, 80 mOhm SiC MOSFET in an SOT-227 package.
Features
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 175 C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
Isolated voltage to 2500 V
Benefits
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
Applications
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120J device is a 1200 V, 80 mOhm SiC MOSFET in an SOT-227 package.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
- Isolated voltage to 2500 V
Benefits
- High efficiency to enable lighter, more compact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership
Applications
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
