Wolfspeed Silicon Carbide MOSFETs E3M0120090J-TR

Description
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Automotive qualified (AEC-Q101) and PPAP capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Applications EV charging DC/DC converters SMPS UPS Solar PV inverters
  • Silicon Carbide MOSFETs - E3M0120090J-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-E3M0120090J-TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-E3M0120090J-TRCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-E3M0120090J-TRDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Automotive qualified (AEC-Q101) and PPAP capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Applications EV charging DC/DC converters SMPS UPS Solar PV inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - E3M0120090J-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E3M0120090J-TR
Silicon Carbide MOSFETs E3M0120090J-TR
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Automotive qualified (AEC-Q101) and PPAP capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Applications EV charging DC/DC converters SMPS UPS Solar PV inverters

Silicon Carbide Power MOSFET
E-Series Automotive
Features

  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Wide creepage (~7mm) between drain and source
  • Automotive qualified (AEC-Q101) and PPAP capable

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase power density
  • Increase system switching frequency

Applications

  • EV charging
  • DC/DC converters
  • SMPS
  • UPS
  • Solar PV inverters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-E3M0120090J-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0120090J-TR-ND
Single FETs, MOSFETs 1697-E3M0120090J-TR-ND
SIC, MOSFET, 120M, 900V, TO-263-

SIC, MOSFET, 120M, 900V, TO-263-

Buy Now Datasheet
Single FETs, MOSFETs - 1697-E3M0120090J-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0120090J-TRCT-ND
Single FETs, MOSFETs 1697-E3M0120090J-TRCT-ND
SIC, MOSFET, 120M, 900V, TO-263-

SIC, MOSFET, 120M, 900V, TO-263-

Buy Now Datasheet
Single FETs, MOSFETs - 1697-E3M0120090J-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0120090J-TRDKR-ND
Single FETs, MOSFETs 1697-E3M0120090J-TRDKR-ND
SIC, MOSFET, 120M, 900V, TO-263-

SIC, MOSFET, 120M, 900V, TO-263-

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number E3M0120090J-TR 1697-E3M0120090J-TR-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.1200 ohms
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