Wolfspeed Silicon Carbide MOSFETs E3M0045065K

Description
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Motor Control EV battery chargers High voltage DC/DC converters
  • Silicon Carbide MOSFETs - E3M0045065K - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-E3M0045065K-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0045065K - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Single FETs, MOSFETs - E3M0045065K - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Motor Control EV battery chargers High voltage DC/DC converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - E3M0045065K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E3M0045065K
Silicon Carbide MOSFETs E3M0045065K
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Motor Control EV battery chargers High voltage DC/DC converters

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Motor Control
  • EV battery chargers
  • High voltage DC/DC converters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-E3M0045065K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0045065K-ND
Single FETs, MOSFETs 1697-E3M0045065K-ND
SIC, MOSFET, 45M, 650V, TO-247-4

SIC, MOSFET, 45M, 650V, TO-247-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0045065K - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
E3M0045065K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs E3M0045065K
SIC, MOSFET, 45M, 650V, TO-247-4

SIC, MOSFET, 45M, 650V, TO-247-4

Supplier's Site
Single FETs, MOSFETs - E3M0045065K - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
E3M0045065K
Single FETs, MOSFETs E3M0045065K
SIC, MOSFET, 45M, 650V, TO-247-4

SIC, MOSFET, 45M, 650V, TO-247-4

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number E3M0045065K 1697-E3M0045065K-ND E3M0045065K E3M0045065K
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
rDS(on) 0.0450 ohms
Package Type TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4
Polarity N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiC (Silicon Carbide Junction Transistor)
Transistor Grade / Operating Range Automotive
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