The MAGX-100027-100CTP is a high-power GaN on Si HEMT amplifier optimized for DC to 2.7 GHz operation, delivering 100 W output power in pulsed or CW mode. It is packaged in a TO-272S-2 plastic case with an exposed thermal pad on the bottom for DC, RF, and thermal grounding. The device operates at a 50 V drain supply voltage, meets RoHS compliance, and is rated for case temperatures from -40°C to +85°C with a maximum channel temperature of 250°C. It is 260°C reflow compatible and tested for ruggedness under 10:1 VSWR mismatch. The part is offered in tape and reel packaging, distinguishing it from bulk-packaged variants in the series.
The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package.
The MAGX-100027-100CTP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MAGX-100027-100CTP |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
