MACOM RF Power Transistor MAGX-100027-100CTP

Description
The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package. The MAGX-100027-100CTP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Request a Quote Datasheet
Description
The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package. The MAGX-100027-100CTP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
RF Power Transistor
MAGX-100027-100CTP
RF Power Transistor MAGX-100027-100CTP
The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package. The MAGX-100027-100CTP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.

The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package.

The MAGX-100027-100CTP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAGX-100027-100CTP
Product Name RF Power Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data

Similar Products

500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor - QPD1016L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-780
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF - 854966-2N3904TF - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1044265-AIKQ100N60CTXKSA1 - Win Source Electronics
Specs
VCES 600 volts
TJ -40 to 175 C (-40 to 347 F)
Package Type SOT3
View Details
6 suppliers