Microchip Technology, Inc. Silicon Carbide MOSFETs MSC080SMA120B4

Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B4 device is a 1200 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
  • Single FETs, MOSFETs - 150-MSC080SMA120B4-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120B4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip - 29AK2561 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B4 device is a 1200 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC080SMA120B4
Silicon Carbide MOSFETs MSC080SMA120B4
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B4 device is a 1200 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B4 device is a 1200 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - 150-MSC080SMA120B4-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC080SMA120B4-ND
Single FETs, MOSFETs 150-MSC080SMA120B4-ND
N-Channel 1200V 37A (Tc) 200W (Tc) Through Hole TO-247-4

N-Channel 1200V 37A (Tc) 200W (Tc) Through Hole TO-247-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120B4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC080SMA120B4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC080SMA120B4
SICFET N-CH 1200V 37A TO247-4

SICFET N-CH 1200V 37A TO247-4

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip - 29AK2561 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip
29AK2561
Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip 29AK2561
MOSFET, N-CH, 1.2KV, 37A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 37A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC080SMA120B4 150-MSC080SMA120B4-ND MSC080SMA120B4 29AK2561
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip
rDS(on) 0.0800 ohms
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