Microchip Technology, Inc. Single FETs, MOSFETs MSC080SMA120B4

N-Channel 1200V 37A (Tc) 200W (Tc) Through Hole TO-247-4

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B4 device is a 1200 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution