Microchip Technology, Inc. Silicon Carbide MOSFETs MSC040SMA120B

Description
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
  • Single FETs, MOSFETs - MSC040SMA120B - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - MSC040SMA120B-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC040SMA120B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1.2Kv, 66A, To-247; Mosfet Module Configuration Microchip - 78AH6570 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC040SMA120B
Silicon Carbide MOSFETs MSC040SMA120B
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - MSC040SMA120B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MSC040SMA120B
Single FETs, MOSFETs MSC040SMA120B
SICFET N-CH 1200V 66A TO247-3

SICFET N-CH 1200V 66A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs
Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs
Manufacturer: Microchip Technology Category: Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs Package: Tube Base Product Number: MSC040 Product Status: Active Vgs (Max): +23V, -10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs
Package: Tube
Base Product Number: MSC040
Product Status: Active
Vgs (Max): +23V, -10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200V 66A MOSFET Transistor
278-MSC040SMA120B
1200V 66A MOSFET Transistor 278-MSC040SMA120B
SICFET N-CH 1200V 66A TO247-3 Product overview: MSC040SMA120B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC040SMA120B can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 66A TO247-3 Product overview: MSC040SMA120B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC040SMA120B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - MSC040SMA120B-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MSC040SMA120B-ND
Single FETs, MOSFETs MSC040SMA120B-ND
N-Channel 1200V 66A (Tc) 323W (Tc) Through Hole TO-247-3

N-Channel 1200V 66A (Tc) 323W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC040SMA120B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC040SMA120B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC040SMA120B
SICFET N-CH 1200V 66A TO247-3

SICFET N-CH 1200V 66A TO247-3

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 66A, To-247; Mosfet Module Configuration Microchip - 78AH6570 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 66A, To-247; Mosfet Module Configuration Microchip
78AH6570
Mosfet, N-Ch, 1.2Kv, 66A, To-247; Mosfet Module Configuration Microchip 78AH6570
MOSFET, N-CH, 1.2KV, 66A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:66A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 66A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:66A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC040SMA120B MSC040SMA120B 278-MSC040SMA120B MSC040SMA120B-ND MSC040SMA120B 78AH6570
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products --Transistors FETs, MOSFETs --Single FETs, MOSFETs 1200V 66A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 66A, To-247; Mosfet Module Configuration Microchip
rDS(on) 0.0400 ohms
Package Type TO-247; TO-247-3L TO-247; TO-247-3 TO-247; SOT3 Tube TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts 1200 volts
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