Guerrilla RF RF Power Transistor GRF0030D

Description
The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
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Description
The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
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Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - GRF0030D - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
GRF0030D
RF Power Transistor GRF0030D
The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number GRF0030D
Product Name RF Power Transistor
Transistor Technology / Material GaN
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