The GRF0030D is a 50 W (P3dB) unmatched GaN-on-SiC HEMT bare die operating from DC to 6 GHz with a maximum drain voltage of 50 V. The die measures 1.630 mm by 0.755 mm and is designed for pulsed and linear applications in cellular infrastructure, radar, communications, and test instrumentation. It operates with a package base temperature range of -40 °C to 105 °C and a maximum junction temperature of 225 °C. The device is RoHS compliant and requires careful power-up and power-down procedures to prevent damage. ESD sensitivity is indicated, with no specified HBM or CDM ratings provided.
The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GRF0030D |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
