RF MOSFET LDMOS 50V NI1230 Product overview: MMRF1306HR5 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-MMRF1306HR5 can be used for catalog matching and distributor lookup.
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.
RF Power Field-Effect Transistor
RF MOSFET LDMOS 50V NI1230
| ERSAELECTRONICS PTE. LTD. | Richardson RFPD | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | RF Transistors |
| Product Number | 285-MMRF1306HR5 | MMRF1306HR5 | MMRF1306HR5 | MMRF1306HR5 |
| Product Name | 50V MOSFET Transistor | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 133 volts | |||
| Transconductance | 0.0280 kS | |||
| PD | 1.33 milliwatts |
