High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.
RF Power Field-Effect Transistor
RF MOSFET LDMOS 50V NI1230
| Richardson RFPD | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Power MOSFET | RF Transistors |
| Product Number | MMRF1306HR5 | MMRF1306HR5 | MMRF1306HR5 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | Ceramic Flanged | CFM4F | NI-1230-4H |
