High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.
RF MOSFET LDMOS 50V NI1230 Product overview: MMRF1306HR5 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-MMRF1306HR5 can be used for catalog matching and distributor lookup.
RF Power Field-Effect Transistor
RF MOSFET LDMOS 50V NI1230
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | MMRF1306HR5 | 285-MMRF1306HR5 | MMRF1306HR5 | MMRF1306HR5 |
| Product Name | RF Power Transistor | 50V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | Ceramic Flanged | Tape & Reel (TR) | CFM4F | NI-1230-4H |
| Power Gain | 22.9 dB | |||
| Output Power | 1250 watts | |||
| Operating Frequency | 1.8 to 600 MHz | |||
| Polarity | N-Channel |
