GaN Systems Inc. GaN Power Transistor GS-065-011-1-L-E01-B

The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology cell layout for high-current die performance and yield. The GS-065-011-1-L is a bottom-side cooled transistor in a 5x6 mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high efficiency power switching. Ultra-low FOM Island Technology Die Small 5x6 mm PDFN package Easy gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V/+10 V) Very high switching frequency (> 20 MHz) Fast and controllable fall and rise times Source Sensepad for optimized gate drive Reverse current capability Zero reverse recovery loss RoHS 6 compliant Applications Power adaptors LED lighting drivers Fast battery charging LLC converters Power Factor Correction Appliance motor drives Wireless power transfer Industrial power supplies