Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCGLQ50X120CTYZBNMG

Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)