Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCGLQ50X120CTYZBNMG

Description
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
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Description
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
Request a Quote
Datasheet
Datasheet Summary
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The MSCGLQ50X120CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module incorporating silicon carbide Schottky diodes and IGBT4 transistors in an isolated package with an AlSiC base plate and Si3N4 substrate for enhanced thermal performance. It has a compact design with a weight of 150 g and supports direct mounting to a heatsink. The device operates with a junction temperature range of -55 °C to 175 °C, and the case temperature range is -55 °C to 125 °C. It features internal thermistor-based temperature monitoring with 1000 Ω resistance at 0 °C and meets RoHS compliance. The package supports 4000 V RMS isolation voltage between terminals and case, and is rated for a mounting torque of 3 to 5 N·m using M6 screws. The module is designed for high-reliability applications including electro-mechanical and electro-hydrostatic actuators, power core modules, and modular power drives.

Datasheet Summary
Powered by GS/AI

The MSCGLQ50X120CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module incorporating silicon carbide Schottky diodes and IGBT4 transistors in an isolated package with an AlSiC base plate and Si3N4 substrate for enhanced thermal performance. It has a compact design with a weight of 150 g and supports direct mounting to a heatsink. The device operates with a junction temperature range of -55 °C to 175 °C, and the case temperature range is -55 °C to 125 °C. It features internal thermistor-based temperature monitoring with 1000 Ω resistance at 0 °C and meets RoHS compliance. The package supports 4000 V RMS isolation voltage between terminals and case, and is rated for a mounting torque of 3 to 5 N·m using M6 screws. The module is designed for high-reliability applications including electro-mechanical and electro-hydrostatic actuators, power core modules, and modular power drives.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCGLQ50X120CTYZBNMG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCGLQ50X120CTYZBNMG
Silicon Carbide MOSFET Modules MSCGLQ50X120CTYZBNMG
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)

Features

  • SiC Schottky Diode
  • IGBT4
  • Low stray inductance
  • Lead frames for power connections
  • SI3N4 substrate for improved thermal performance
  • AlSiC base plate for extended reliability and reduced weight
  • Extended storage temperature range
  • Internal thermistor for temperature monitoring

Benefits

  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
  • High reliability Power Core Module (PCM)
  • Modular power module for Power Drive Electronic (PDE)
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSCGLQ50X120CTYZBNMG
Product Name Silicon Carbide MOSFET Modules
Package Type HPD
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