MACOM Bipolar RF Transistors MRF1000MB

Description
RF Transistor NPN 20V 200mA 0.7W Chassis Mount 332A-03, Style 2
Request a Quote Datasheet
Description
RF Transistor NPN 20V 200mA 0.7W Chassis Mount 332A-03, Style 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 1465-1136-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
1465-1136-ND
Bipolar RF Transistors 1465-1136-ND
RF Transistor NPN 20V 200mA 0.7W Chassis Mount 332A-03, Style 2

RF Transistor NPN 20V 200mA 0.7W Chassis Mount 332A-03, Style 2

Buy Now Datasheet
RF Power Transistor - MRF1000MB - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF1000MB
RF Power Transistor MRF1000MB
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1324013-MRF1000MB - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1324013-MRF1000MB
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1324013-MRF1000MB
Manufacturer: MACOM Technology Solutions Win Source Part Number: 1324013-MRF1000MB Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Tray Standard Package: 10 Mounting: Chassis Mount Power - Max: 0.7W Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Gain: 10.7dB ~ 12dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Supplier Device Package: 332A-03, Style 2 Case / Package: 332A-02 ECCN: EAR99 Fake Threat In the Open Market: 74 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: 1465-1136 Base Product Number: MRF1000 RoHS Status: ROHS3 Compliant

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1324013-MRF1000MB
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 10
Mounting: Chassis Mount
Power - Max: 0.7W
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Gain: 10.7dB ~ 12dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Supplier Device Package: 332A-03, Style 2
Case / Package: 332A-02
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1465-1136
Base Product Number: MRF1000
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF1000MB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF1000MB
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF1000MB
RF TRANS NPN 20V 332A-03

RF TRANS NPN 20V 332A-03

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors RF Transistors Bipolar RF Transistors
Product Number 1465-1136-ND MRF1000MB 1324013-MRF1000MB MRF1000MB
Product Name Bipolar RF Transistors RF Power Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type 332A-02 Ceramic Flanged SOT3; 332A-02
Power Gain 10 dB 10.7 to 12 dB
Output Power 0.2000 watts 0.7000 watts 0.7000 watts
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