Microchip Technology, Inc. Silicon Carbide MOSFETs MSC017SMA120S

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
  • Silicon Carbide MOSFETs - MSC017SMA120S - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 150-MSC017SMA120S-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote
Datasheet
Datasheet Summary
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The MSC017SMA120S is a Silicon Carbide (SiC) N-Channel Power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1200 V and a low on-resistance of 17 mOc. It operates efficiently at high junction temperatures, with a maximum rating of 175 ¬8C, making it suitable for demanding environments. The device is packaged in a TO-268 (D3PAK) format and is RoHS compliant. Key specifications include a continuous drain current of 40 A at 100 ¬8C and a total power dissipation of 357 W at 25 ¬8C. The device exhibits low gate charge and capacitances, enabling fast switching speeds and improved thermal performance. It is particularly beneficial for applications such as PV inverters, industrial motor drives, smart grid systems, and electric vehicle chargers. The integrated body diode offers reliable performance, eliminating the need for external freewheeling diodes, which can reduce overall system costs.

Datasheet Summary
Powered by GS/AI

The MSC017SMA120S is a Silicon Carbide (SiC) N-Channel Power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1200 V and a low on-resistance of 17 mOc. It operates efficiently at high junction temperatures, with a maximum rating of 175 ¬8C, making it suitable for demanding environments. The device is packaged in a TO-268 (D3PAK) format and is RoHS compliant. Key specifications include a continuous drain current of 40 A at 100 ¬8C and a total power dissipation of 357 W at 25 ¬8C. The device exhibits low gate charge and capacitances, enabling fast switching speeds and improved thermal performance. It is particularly beneficial for applications such as PV inverters, industrial motor drives, smart grid systems, and electric vehicle chargers. The integrated body diode offers reliable performance, eliminating the need for external freewheeling diodes, which can reduce overall system costs.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - MSC017SMA120S - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC017SMA120S
Silicon Carbide MOSFETs MSC017SMA120S
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - 150-MSC017SMA120S-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC017SMA120S-ND
Single FETs, MOSFETs 150-MSC017SMA120S-ND
Mosfet Array

Mosfet Array

Buy Now Datasheet
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Microchip Technology Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Package: Bulk Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Power Dissipation (Max): 357W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC017SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC017SMA120S
MOSFET SIC 1200V 17 MOHM TO-268

MOSFET SIC 1200V 17 MOHM TO-268

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC017SMA120S 150-MSC017SMA120S-ND MSC017SMA120S
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0176 ohms
Package Type TO-268 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA SOT3 TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Polarity N-Channel N-Channel
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