Microchip Technology, Inc. Silicon Carbide MOSFETs MSC360SMA120S

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
  • Silicon Carbide MOSFETs - MSC360SMA120S - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 150-MSC360SMA120S-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC360SMA120S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - MSC360SMA120S - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC360SMA120S
Silicon Carbide MOSFETs MSC360SMA120S
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - 150-MSC360SMA120S-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC360SMA120S-ND
Single FETs, MOSFETs 150-MSC360SMA120S-ND
MOSFET SIC 1200 V 360 MOHM TO-26

MOSFET SIC 1200 V 360 MOHM TO-26

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC360SMA120S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC360SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC360SMA120S
MOSFET SIC 1200 V 360 MOHM TO-26

MOSFET SIC 1200 V 360 MOHM TO-26

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSC360SMA120S 150-MSC360SMA120S-ND MSC360SMA120S
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.3600 ohms
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