Microchip Technology, Inc. Single FETs, MOSFETs MSC360SMA120S

Description
MOSFET SIC 1200 V 360 MOHM TO-26
  • Single FETs, MOSFETs - 150-MSC360SMA120S-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - MSC360SMA120S - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC360SMA120S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
MOSFET SIC 1200 V 360 MOHM TO-26
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 150-MSC360SMA120S-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC360SMA120S-ND
Single FETs, MOSFETs 150-MSC360SMA120S-ND
MOSFET SIC 1200 V 360 MOHM TO-26

MOSFET SIC 1200 V 360 MOHM TO-26

Buy Now Datasheet
Silicon Carbide MOSFETs - MSC360SMA120S - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC360SMA120S
Silicon Carbide MOSFETs MSC360SMA120S
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC360SMA120S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC360SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC360SMA120S
MOSFET SIC 1200 V 360 MOHM TO-26

MOSFET SIC 1200 V 360 MOHM TO-26

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 150-MSC360SMA120S-ND MSC360SMA120S MSC360SMA120S
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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