Microchip Technology, Inc. Silicon Carbide MOSFETs MSC060SMA070B4

Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B4 device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
  • MOSFETs - 2419267P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 2419267 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 2419266 - RS Components, Ltd.
    RS Components, Ltd.
  • Mosfet, N-Ch, 700V, 39A, To-247 Rohs Compliant Microchip - 29AK2559 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC060SMA070B4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B4 device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC060SMA070B4
Silicon Carbide MOSFETs MSC060SMA070B4
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B4 device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B4 device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
MOSFETs - 2419267P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2419267P
MOSFETs 2419267P
MOSFET SIC 700 V 60 mOhm TO-247-4

MOSFET SIC 700 V 60 mOhm TO-247-4

Supplier's Site
MOSFETs - 2419267 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2419267
MOSFETs 2419267
MOSFET SIC 700 V 60 mOhm TO-247-4

MOSFET SIC 700 V 60 mOhm TO-247-4

Supplier's Site
MOSFETs - 2419266 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2419266
MOSFETs 2419266
MOSFET SIC 700 V 60 mOhm TO-247-4

MOSFET SIC 700 V 60 mOhm TO-247-4

Supplier's Site
Mosfet, N-Ch, 700V, 39A, To-247 Rohs Compliant Microchip - 29AK2559 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 700V, 39A, To-247 Rohs Compliant Microchip
29AK2559
Mosfet, N-Ch, 700V, 39A, To-247 Rohs Compliant Microchip 29AK2559
MOSFET, N-CH, 700V, 39A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 700V, 39A, TO-247 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC060SMA070B4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC060SMA070B4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC060SMA070B4
TRANS SJT N-CH 700V 39A TO247-4

TRANS SJT N-CH 700V 39A TO247-4

Supplier's Site

Technical Specifications

  Richardson RFPD RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC060SMA070B4 2419267P 29AK2559 MSC060SMA070B4
Product Name Silicon Carbide MOSFETs MOSFETs Mosfet, N-Ch, 700V, 39A, To-247 Rohs Compliant Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0600 ohms
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