Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobili
ty-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Zero reverse recovery charge
Applications
High frequency DC-DC converter
Battery charger
Battery management system
Notebook
Industry
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Zero reverse recovery charge
Applications
- High frequency DC-DC converter
- Battery charger
- Battery management system
- Notebook
- Industry
