Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM027CT6AG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits High efficiency converter Outstanding performance at high-frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible Power Supplies EV motor and traction drive
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120AM027CT6AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits High efficiency converter Outstanding performance at high-frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible Power Supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120AM027CT6AG
Silicon Carbide MOSFET Modules MSCSM120AM027CT6AG
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits High efficiency converter Outstanding performance at high-frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible Power Supplies EV motor and traction drive

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance
  • M5 power connectors

Benefits

  • High efficiency converter
  • Outstanding performance at high-frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible Power Supplies
  • EV motor and traction drive
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120AM027CT6AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120AM027CT6AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120AM027CT6AG
SIC 2N-CH 1200V 733A SP6C

SIC 2N-CH 1200V 733A SP6C

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120AM027CT6AG MSCSM120AM027CT6AG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C
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