Innoscience Technology Co., Ltd. GaN Power Transistor ISG3201

Description
Currently not available for sale in the U.S. 100V Half-Bridge Solid-GaN Integrating Gate Driver The ISG3201 is a 100V Copak product in Innoscience’s SolidGaN family. It integrates two 100V enhancement mode GaN devices with a 100V half-bridge gate driver. ISG3201 employs bootstrap technique for high-side driver voltage and can operate up to 100V. The integrated driver eliminates the external clamping circuit. Besides, turn-on and turn-off resistors, bootstrap and VCC decoupling caps are all integrated which makes the external circuit super simple. Due to excellent internal layout, the associated gate loop and power loop parasitic is reduced significantly, with value much less than 1nH. As a result, ultra-low voltage spike on switch nodes can be achieved. Turn-on speed of the half-bridge GaN HEMTs can be adjusted by an optional resister. The optimized pin layout of ISG3201 optimizes the power flow and simplifies the PCB board layout. ISG3201 employs independent high-side and low-side PWM input, which are usually available from most of GaN controllers. The ISG3201 is available in a compact 5mmx6.5mmx1.12mm LGA package. Features 2x 100V, 3.2mohm Emode GaN HEMT with Half Bridge Driver 60A continuous current capability Zero reverse recovery charge Ultra-low on resistance Minimum external components. (Driving resistor, bootstrap and Vcc capacitors integrated) Reduced Gate Loop Inductance Reduced Power Loop Inductance Easy for power stage layout Independent High-Side and Low-Side TTL Logic Inputs High-side floating bias voltage rail operates up to 100 VDC Fast Propagation Times (17ns Typical) 5mm x 6.5mm x 1.12mm LGA Package Applications ISG3201 is suitable for high-frequency Buck converter, half bridge or full bridge converters, Class D audio amplifier, LLC converter and power modules in the following applications: AI Server Telecom Super Computer Motor Drive
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Description
Currently not available for sale in the U.S. 100V Half-Bridge Solid-GaN Integrating Gate Driver The ISG3201 is a 100V Copak product in Innoscience’s SolidGaN family. It integrates two 100V enhancement mode GaN devices with a 100V half-bridge gate driver. ISG3201 employs bootstrap technique for high-side driver voltage and can operate up to 100V. The integrated driver eliminates the external clamping circuit. Besides, turn-on and turn-off resistors, bootstrap and VCC decoupling caps are all integrated which makes the external circuit super simple. Due to excellent internal layout, the associated gate loop and power loop parasitic is reduced significantly, with value much less than 1nH. As a result, ultra-low voltage spike on switch nodes can be achieved. Turn-on speed of the half-bridge GaN HEMTs can be adjusted by an optional resister. The optimized pin layout of ISG3201 optimizes the power flow and simplifies the PCB board layout. ISG3201 employs independent high-side and low-side PWM input, which are usually available from most of GaN controllers. The ISG3201 is available in a compact 5mmx6.5mmx1.12mm LGA package. Features 2x 100V, 3.2mohm Emode GaN HEMT with Half Bridge Driver 60A continuous current capability Zero reverse recovery charge Ultra-low on resistance Minimum external components. (Driving resistor, bootstrap and Vcc capacitors integrated) Reduced Gate Loop Inductance Reduced Power Loop Inductance Easy for power stage layout Independent High-Side and Low-Side TTL Logic Inputs High-side floating bias voltage rail operates up to 100 VDC Fast Propagation Times (17ns Typical) 5mm x 6.5mm x 1.12mm LGA Package Applications ISG3201 is suitable for high-frequency Buck converter, half bridge or full bridge converters, Class D audio amplifier, LLC converter and power modules in the following applications: AI Server Telecom Super Computer Motor Drive
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
GaN Power Transistor - ISG3201 - Richardson RFPD
Downers Grove, IL, United States
GaN Power Transistor
ISG3201
GaN Power Transistor ISG3201
Currently not available for sale in the U.S. 100V Half-Bridge Solid-GaN Integrating Gate Driver The ISG3201 is a 100V Copak product in Innoscience’s SolidGaN family. It integrates two 100V enhancement mode GaN devices with a 100V half-bridge gate driver. ISG3201 employs bootstrap technique for high-side driver voltage and can operate up to 100V. The integrated driver eliminates the external clamping circuit. Besides, turn-on and turn-off resistors, bootstrap and VCC decoupling caps are all integrated which makes the external circuit super simple. Due to excellent internal layout, the associated gate loop and power loop parasitic is reduced significantly, with value much less than 1nH. As a result, ultra-low voltage spike on switch nodes can be achieved. Turn-on speed of the half-bridge GaN HEMTs can be adjusted by an optional resister. The optimized pin layout of ISG3201 optimizes the power flow and simplifies the PCB board layout. ISG3201 employs independent high-side and low-side PWM input, which are usually available from most of GaN controllers. The ISG3201 is available in a compact 5mmx6.5mmx1.12mm LGA package. Features 2x 100V, 3.2mohm Emode GaN HEMT with Half Bridge Driver 60A continuous current capability Zero reverse recovery charge Ultra-low on resistance Minimum external components. (Driving resistor, bootstrap and Vcc capacitors integrated) Reduced Gate Loop Inductance Reduced Power Loop Inductance Easy for power stage layout Independent High-Side and Low-Side TTL Logic Inputs High-side floating bias voltage rail operates up to 100 VDC Fast Propagation Times (17ns Typical) 5mm x 6.5mm x 1.12mm LGA Package Applications ISG3201 is suitable for high-frequency Buck converter, half bridge or full bridge converters, Class D audio amplifier, LLC converter and power modules in the following applications: AI Server Telecom Super Computer Motor Drive

Currently not available for sale in the U.S.

100V Half-Bridge Solid-GaN Integrating Gate Driver

The ISG3201 is a 100V Copak product in Innoscience’s SolidGaN family. It integrates two 100V enhancement mode GaN devices with a 100V half-bridge gate driver. ISG3201 employs bootstrap technique for high-side driver voltage and can operate up to 100V. The integrated driver eliminates the external clamping circuit. Besides, turn-on and turn-off resistors, bootstrap and VCC decoupling caps are all integrated which makes the external circuit super simple. Due to excellent internal layout, the associated gate loop and power loop parasitic is reduced significantly, with value much less than 1nH. As a result, ultra-low voltage spike on switch nodes can be achieved. Turn-on speed of the half-bridge GaN HEMTs can be adjusted by an optional resister. The optimized pin layout of ISG3201 optimizes the power flow and simplifies the PCB board layout. ISG3201 employs independent high-side and low-side PWM input, which are usually available from most of GaN controllers. The ISG3201 is available in a compact 5mmx6.5mmx1.12mm LGA package.

Features

  • 2x 100V, 3.2mohm Emode GaN HEMT with Half Bridge Driver
  • 60A continuous current capability
  • Zero reverse recovery charge
  • Ultra-low on resistance
  • Minimum external components. (Driving resistor, bootstrap and Vcc capacitors integrated)
  • Reduced Gate Loop Inductance
  • Reduced Power Loop Inductance
  • Easy for power stage layout
  • Independent High-Side and Low-Side TTL Logic Inputs
  • High-side floating bias voltage rail operates up to 100 VDC
  • Fast Propagation Times (17ns Typical)
  • 5mm x 6.5mm x 1.12mm LGA Package

Applications

ISG3201 is suitable for high-frequency Buck converter, half bridge or full bridge converters, Class D audio amplifier, LLC converter and power modules in the following applications:

  • AI
  • Server
  • Telecom
  • Super Computer
  • Motor Drive
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Transistors
Product Number ISG3201
Product Name GaN Power Transistor
Transistor Technology / Material GaN
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