Microchip Technology, Inc. RF Power Transistor DRF1301

Description
The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal ground, Anti-Ring function Invert and Non-invert select pin provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency ISM applications.
Request a Quote
Description
The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal ground, Anti-Ring function Invert and Non-invert select pin provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency ISM applications.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - DRF1301 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
DRF1301
RF Power Transistor DRF1301
The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal ground, Anti-Ring function Invert and Non-invert select pin provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency ISM applications.

The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal ground, Anti-Ring function Invert and Non-invert select pin provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency ISM applications.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number DRF1301
Product Name RF Power Transistor
Output Power 1000 watts
Unlock Full Specs
to access all available technical data