The MSC035SMA170S is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1700 V and a low on-resistance of 35 mOc. It operates effectively at high junction temperatures, with a maximum rating of 175 ¬8C, making it suitable for demanding environments. The device is packaged in a TO-268 (D3PAK) format, facilitating surface mount applications. Key specifications include low gate charge and capacitances, which contribute to fast switching speeds and improved efficiency. The device also offers a reliable body diode and superior avalanche ruggedness, eliminating the need for an external freewheeling diode. Applications for the MSC035SMA170S include photovoltaic inverters, industrial motor drives, smart grid systems, and electric vehicle powertrains. Its characteristics make it a viable option for engineers seeking high-performance MOSFET solutions in compact designs.
Features
Benefits
Applications
N-Channel 1700V 59A (Tc) 278W (Tc) Surface Mount D3PAK
MOSFET SIC 1700V 35 MOHM TO-268 Product overview: MSC035SMA170S from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 35 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 35 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC035SMA170S can be used for catalog matching and distributor lookup.
MOSFET SIC 1700V 35 MOHM TO-268
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET SIC 1700V 35 MOHM TO-268
| Richardson RFPD | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | MSC035SMA170S | 150-MSC035SMA170S-ND | 278-MSC035SMA170S | MSC035SMA170S | MSC035SMA170S | |
| Product Name | Silicon Carbide MOSFETs | Single FETs, MOSFETs | 1700V 35 MOHM MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.0350 ohms | |||||
| Package Type | TO-268 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | SOT3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| MOSFET Operating Mode | Enhancement |
