Microchip Technology, Inc. Silicon Carbide MOSFETs MSC035SMA170S

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership Applications PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
  • Silicon Carbide MOSFETs - MSC035SMA170S - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - MSC035SMA170S - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 150-MSC035SMA170S-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC035SMA170S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership Applications PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote
Datasheet
Datasheet Summary
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The MSC035SMA170S is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1700 V and a low on-resistance of 35 mOc. It operates effectively at high junction temperatures, with a maximum rating of 175 ¬8C, making it suitable for demanding environments. The device is packaged in a TO-268 (D3PAK) format, facilitating surface mount applications. Key specifications include low gate charge and capacitances, which contribute to fast switching speeds and improved efficiency. The device also offers a reliable body diode and superior avalanche ruggedness, eliminating the need for an external freewheeling diode. Applications for the MSC035SMA170S include photovoltaic inverters, industrial motor drives, smart grid systems, and electric vehicle powertrains. Its characteristics make it a viable option for engineers seeking high-performance MOSFET solutions in compact designs.

Datasheet Summary
Powered by GS/AI

The MSC035SMA170S is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1700 V and a low on-resistance of 35 mOc. It operates effectively at high junction temperatures, with a maximum rating of 175 ¬8C, making it suitable for demanding environments. The device is packaged in a TO-268 (D3PAK) format, facilitating surface mount applications. Key specifications include low gate charge and capacitances, which contribute to fast switching speeds and improved efficiency. The device also offers a reliable body diode and superior avalanche ruggedness, eliminating the need for an external freewheeling diode. Applications for the MSC035SMA170S include photovoltaic inverters, industrial motor drives, smart grid systems, and electric vehicle powertrains. Its characteristics make it a viable option for engineers seeking high-performance MOSFET solutions in compact designs.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - MSC035SMA170S - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC035SMA170S
Silicon Carbide MOSFETs MSC035SMA170S
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership Applications PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175 C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need for external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - MSC035SMA170S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MSC035SMA170S
Single FETs, MOSFETs MSC035SMA170S
MOSFET SIC 1700V 35 MOHM TO-268

MOSFET SIC 1700V 35 MOHM TO-268

Supplier's Site Datasheet
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Microchip Technology Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Package: Bulk Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Buy Now Datasheet
Single FETs, MOSFETs - 150-MSC035SMA170S-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC035SMA170S-ND
Single FETs, MOSFETs 150-MSC035SMA170S-ND
N-Channel 1700V 59A (Tc) 278W (Tc) Surface Mount D3PAK

N-Channel 1700V 59A (Tc) 278W (Tc) Surface Mount D3PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC035SMA170S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC035SMA170S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC035SMA170S
MOSFET SIC 1700V 35 MOHM TO-268

MOSFET SIC 1700V 35 MOHM TO-268

Supplier's Site

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSC035SMA170S MSC035SMA170S 150-MSC035SMA170S-ND MSC035SMA170S
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0350 ohms
Package Type TO-268 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA SOT3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1700 volts
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