The MSC035SMA170S is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1700 V and a low on-resistance of 35 mOc. It operates effectively at high junction temperatures, with a maximum rating of 175 ¬8C, making it suitable for demanding environments. The device is packaged in a TO-268 (D3PAK) format, facilitating surface mount applications. Key specifications include low gate charge and capacitances, which contribute to fast switching speeds and improved efficiency. The device also offers a reliable body diode and superior avalanche ruggedness, eliminating the need for an external freewheeling diode. Applications for the MSC035SMA170S include photovoltaic inverters, industrial motor drives, smart grid systems, and electric vehicle powertrains. Its characteristics make it a viable option for engineers seeking high-performance MOSFET solutions in compact designs.
N-Channel 1700V 59A (Tc) 278W (Tc) Surface Mount D3PAK
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Features
Benefits
Applications
MOSFET SIC 1700V 35 MOHM TO-268
MOSFET SIC 1700V 35 MOHM TO-268
| DigiKey | Win Source Electronics | Richardson RFPD | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 150-MSC035SMA170S-ND | MSC035SMA170S | MSC035SMA170S | MSC035SMA170S | |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||
| Package Type | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | SOT3 | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| rDS(on) | 0.0350 ohms | ||||
| V(BR)DSS | 1700 volts |
