MACOM Bipolar RF Transistors MRF10120

Description
RF TRANS NPN 55V 355C-02
Request a Quote Datasheet
Description
RF TRANS NPN 55V 355C-02
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - MRF10120 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MRF10120
Bipolar RF Transistors MRF10120
RF TRANS NPN 55V 355C-02

RF TRANS NPN 55V 355C-02

Supplier's Site Datasheet
Bipolar RF Transistors - 1465-1139-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
1465-1139-ND
Bipolar RF Transistors 1465-1139-ND
RF Transistor NPN 55V 15A 120W Chassis Mount 355C-02, Style 1

RF Transistor NPN 55V 15A 120W Chassis Mount 355C-02, Style 1

Buy Now Datasheet
RF Power Transistor - MRF10120 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF10120
RF Power Transistor MRF10120
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1080391-MRF10120 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1080391-MRF10120
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1080391-MRF10120
Win Source Part Number: 1080391-MRF10120 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tray Standard Package: 20 Power - Max: 120W Voltage - Collector Emitter Breakdown (Max): 55V Current - Collector (Ic) (Max): 15A Gain: 8.5dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Mounting Type: Chassis Mount Package / Case: 355C-02 Supplier Device Package: 355C-02, Style 1 Temperature Range - Operating: 200°C (TJ) Alternative Parts (Cross-Reference): DME375A; 1090MP; 1014-6A; 2A8; ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: MACOM Technology Solutions Other Names: 1465-1139

Win Source Part Number: 1080391-MRF10120
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Tray
Standard Package: 20
Power - Max: 120W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 15A
Gain: 8.5dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Mounting Type: Chassis Mount
Package / Case: 355C-02
Supplier Device Package: 355C-02, Style 1
Temperature Range - Operating: 200°C (TJ)
Alternative Parts (Cross-Reference): DME375A; 1090MP; 1014-6A; 2A8;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: MACOM Technology Solutions
Other Names: 1465-1139

Buy Now Datasheet
Sheung Wan, Hong Kong
RF Bipolar Transistors
MRF10120
RF Bipolar Transistors MRF10120
RF Bipolar Transistors

RF Bipolar Transistors

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF10120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF10120
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF10120
RF TRANS NPN 55V 355C-02

RF TRANS NPN 55V 355C-02

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Richardson RFPD Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MRF10120 1465-1139-ND MRF10120 1080391-MRF10120 MRF10120 MRF10120
Product Name Bipolar RF Transistors Bipolar RF Transistors RF Power Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF RF Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN
Package Type 355C-02 355C-02 Ceramic Flanged SOT3
IC(max) 15000 milliamps
VCEO 55 volts 55 volts
Power Gain 8.5 dB 8.5 dB 8.5 dB
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