1200V, 80 mΩ typical Silicon Carbide (SiC) N-Channel MOSFET in a surface mount, top-side cooled 16-lead package with a source sense, designed for high-efficiency power conversion in applications such as PV inverters, EV chargers, and industrial motor drives. It operates with a maximum junction temperature of 175 °C, has a continuous drain current of 43 A at 25 °C, and features low gate charge, fast switching, and inherent body diode performance eliminating the need for an external freewheeling diode. The device supports pulsed drain currents up to 111 A and has a junction-to-case thermal resistance of 0.43-0.56 °C/W. It is RoHS compliant and meets ESD standards per JESD-625.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MSC080SMA120SCT/R |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0800 ohms |
