Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM042CT6AG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) EV motor and traction drive Welding converters Switched mode power supplies
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) EV motor and traction drive Welding converters Switched mode power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120AM042CT6AG
Silicon Carbide MOSFET Modules MSCSM120AM042CT6AG
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) EV motor and traction drive Welding converters Switched mode power supplies

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

  • High efficiency converters
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS compliant

Applications

  • Uninterruptible Power Supply (UPS)
  • EV motor and traction drive
  • Welding converters
  • Switched mode power supplies
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120AM042CT6AG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120AM042CT6AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120AM042CT6AG
SIC 2N-CH 1200V 495A SP6C

SIC 2N-CH 1200V 495A SP6C

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120AM042CT6AG MSCSM120AM042CT6AG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C
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