Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules MSCGTQ100HD65C1AG

Description
Features High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance AlN substrate for improved thermal performance Benefits Stable temperature behavior Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat Low Profile RoHS compliant Applications Power factor correction
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Description
Features High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance AlN substrate for improved thermal performance Benefits Stable temperature behavior Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat Low Profile RoHS compliant Applications Power factor correction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
MSCGTQ100HD65C1AG
Silicon Carbide/Silicon Hybrid Modules MSCGTQ100HD65C1AG
Features High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance AlN substrate for improved thermal performance Benefits Stable temperature behavior Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat Low Profile RoHS compliant Applications Power factor correction

Features

  • High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • AlN substrate for improved thermal performance

Benefits

  • Stable temperature behavior
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low Profile
  • RoHS compliant

Applications

  • Power factor correction
Supplier's Site Datasheet
IGBT Modules - 150-MSCGTQ100HD65C1AG-ND - DigiKey
Thief River Falls, MN, United States
IGBT Module Trench Half Bridge 650V 80A Chassis Mount SP1

IGBT Module Trench Half Bridge 650V 80A Chassis Mount SP1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - MSCGTQ100HD65C1AG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - IGBTs
MSCGTQ100HD65C1AG
Discrete Semiconductor Products - Transistors - IGBTs MSCGTQ100HD65C1AG
PM-IGBT-TFS-SBD~-SP1 F

PM-IGBT-TFS-SBD~-SP1F

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Transistors Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number MSCGTQ100HD65C1AG 150-MSCGTQ100HD65C1AG-ND MSCGTQ100HD65C1AG
Product Name Silicon Carbide/Silicon Hybrid Modules IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs
Transistor Technology / Material Silicon Carbide
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