GaN Systems Inc. GaN Power Transistor GS-065-060-5-B-A-TR

The GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to prove its transistors lifetimes exceed market requirements. The new GaN transistor provides low RDS(on) (25 mOhm) and features a 60A IDS rating and GaN Systems’ high-performance GaNPX packaging, which enables ultra-low inductance and best thermal resistance in a compact form factor. Leveraging these transistors, wide ranging automotive applications from onboard battery chargers, DC-DC converters, EV traction inverters, electronic power steering, and motor drives can benefit from high reliability and reductions in volume, weight, and cost. Features AEC-Q101 and AutoQual+ (Enhanced-AEC-Q101) 650 V enhancement mode power transistor Bottom-cooled, Low inductance GaNPX package RDS(on) = 25 mOhm IDS(max) = 60 A Ultra-low FOM Simple gate drive Requirements (0 V to 6 V) Transient tolerant gate drive (-20 / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse conduction capability Zero reverse recovery loss Small 11 x 9 mm2 PCB footprint Dual gate pads for optimal board layout RoHS 3 (6+4) compliant Applications On Board Chargers Traction Drive DC-DC converters AC-DC Converters Industrial Motor Drives Solar Inverters Bridgeless Totem Pole PFC