Wolfspeed Silicon Carbide MOSFETs E3M0060065D

Description
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications EV Battery Chargers High Voltage DC/DC Converters
  • Silicon Carbide MOSFETs - E3M0060065D - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-E3M0060065D-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0060065D - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications EV Battery Chargers High Voltage DC/DC Converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - E3M0060065D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E3M0060065D
Silicon Carbide MOSFETs E3M0060065D
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications EV Battery Chargers High Voltage DC/DC Converters

Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features

  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • EV Battery Chargers
  • High Voltage DC/DC Converters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-E3M0060065D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0060065D-ND
Single FETs, MOSFETs 1697-E3M0060065D-ND
60M 650V SIC AUTOMOTIVE MOSFET

60M 650V SIC AUTOMOTIVE MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0060065D - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
E3M0060065D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs E3M0060065D
60M 650V SIC AUTOMOTIVE MOSFET

60M 650V SIC AUTOMOTIVE MOSFET

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number E3M0060065D 1697-E3M0060065D-ND E3M0060065D
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0600 ohms
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
Polarity N-Channel
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