Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSC70SM120JCU2

Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Stable temperature behavior Low junction-to-case thermal resistance RoHS compliant Applications AC and DC motor control Switched mode power supplies Power factor correction Brake switch
  • Silicon Carbide MOSFET Modules - MSC70SM120JCU2 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC70SM120JCU2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Stable temperature behavior Low junction-to-case thermal resistance RoHS compliant Applications AC and DC motor control Switched mode power supplies Power factor correction Brake switch
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSC70SM120JCU2 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSC70SM120JCU2
Silicon Carbide MOSFET Modules MSC70SM120JCU2
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Stable temperature behavior Low junction-to-case thermal resistance RoHS compliant Applications AC and DC motor control Switched mode power supplies Power factor correction Brake switch

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Low stray inductance

Benefits

  • Outstanding performance at high frequency operation
  • High efficiency converter
  • Direct mounting to heatsink (isolated package)
  • Stable temperature behavior
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • AC and DC motor control
  • Switched mode power supplies
  • Power factor correction
  • Brake switch
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC70SM120JCU2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC70SM120JCU2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC70SM120JCU2
SICFET N-CH 1.2KV 89A SOT227

SICFET N-CH 1.2KV 89A SOT227

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC70SM120JCU2 MSC70SM120JCU2
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT-227 SOT-227-4, miniBLOC
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