MACOM RF MOSFET Transistors DU28120T

DU28120T is an N-channel enhancement mode RF power MOSFET transistor designed for 120 W output at 2-175 MHz and 28 V drain supply. It uses a DMOS structure with low capacitances for broadband operation and is packaged in a case with dimensions of 24.64-24.89 mm by 18.29-18.54 mm by 21.21-21.97 mm. Maximum drain-source voltage is 65 V, gate-source voltage is 20 V, and continuous drain current is 24 A. Thermal resistance junction-to-case is 0.65 °C/W. Electrical parameters include a drain efficiency of 60% at 175 MHz, power gain of 13 dB, and input/output capacitances of 270 pF and 240 pF at 28 V, 1 MHz. The device is RoHS compliant and has a load mismatch tolerance of up to 30:1 VSWR.