Microchip Technology, Inc. RF Power Transistor DC35GN-15-Q4

Description
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.
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Description
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.
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Suppliers

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RF Power Transistor - DC35GN-15-Q4 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
DC35GN-15-Q4
RF Power Transistor DC35GN-15-Q4
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.

The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.

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Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number DC35GN-15-Q4
Product Name RF Power Transistor
Transistor Technology / Material GaN
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