Wolfspeed Silicon Carbide MOSFET Modules HAS175M12BM3T

Description
Technical Features Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62 mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS
  • Silicon Carbide MOSFET Modules - HAS175M12BM3T - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-HAS175M12BM3T-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Technical Features Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62 mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - HAS175M12BM3T - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
HAS175M12BM3T
Silicon Carbide MOSFET Modules HAS175M12BM3T
Technical Features Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62 mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS

Technical Features

  • Industry Standard 62 mm Footprint
  • High Humidity Operation THB-80 (HV-H3TRB)
  • Ultra Low Loss, High-Frequency Operation
  • Zero Reverse Recovery from Diodes
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Copper Baseplate and Aluminum Nitride Insulator

System Benefits

  • 62 mm Form Factor Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC

Applications

  • Induction Heating
  • Motor Drives
  • Renewables
  • Railway Auxiliary and Traction
  • EV Fast Charging
  • UPS and SMPS
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-HAS175M12BM3T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-HAS175M12BM3T-ND
FET, MOSFET Arrays 1697-HAS175M12BM3T-ND
SIC, MODULE, 175A, 1200V, 62MM,

SIC, MODULE, 175A, 1200V, 62MM,

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number HAS175M12BM3T 1697-HAS175M12BM3T-ND
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays
Package Type 62mm Module
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