Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM13CD3AG

The MSCSM120AM13CD3AG is a silicon carbide power module for high-efficiency converters in applications such as welding, switched-mode power supplies, uninterruptible power supplies, and EV traction drives. It features a single SiC MOSFET and SiC Schottky diode in a single package with an AlN substrate and M6 power connectors, enabling direct heatsink mounting. The module is rated for a drain-source voltage of 1200 V, continuous drain current of 171 A at 25 °C case temperature, and a junction-to-case thermal resistance of 0.206 °C/W for the MOSFET and 0.49 °C/W for the diode. It supports operation from -40 °C to 175 °C junction temperature and meets RoHS requirements. The Kelvin emitter design facilitates driver control, and the device exhibits zero reverse and forward recovery with temperature-independent switching behavior. The package has an isolation voltage rating of 4000 V RMS.