Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name	Notes
RF Power Transistor -- MAGE-102425-30CPPR	300 W MACOM GaN Power Transistor Based on MACOM’s Gen4 GaN technology, the new MAGe-102425-300 delivers performance that defies the inherent power efficiency and density limitations of LDMOS at an...
Silicon Carbide MOSFETs -- MSC025SMA330B4	3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize...
GaN Power Transistor -- INN650D600A	Currently not available for sale in the U.S.
GaN Power Transistor -- ISG3202LA	Currently not available for sale in the U.S.
GaN Power Transistor -- ISG6103	Currently not available for sale in the U.S. 700V SolidGaN with Integrated Current Sense The ISG6103 SolidGaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a...
GaN Power Transistor -- INN150FQ032A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size Features GaN-on-Silicon E-mode HEMT technology Industry...
GaN Power Transistor -- INN80LA01	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size Features AEC-Q101 Qualified Ultra-High Switching Frequency...
GaN Power Transistor -- INN100W032A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in WLCSP with 3.5 mm x 2.13 mm package size. Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- ISG6106QA	Currently not available for sale in the U.S. The ISG6106 Solid GaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a smart gate driver, and loss-less...
GaN Power Transistor -- ISG6107QA	Currently not available for sale in the U.S. The ISG6107 Solid GaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a smart gate driver, and loss-less...
GaN Power Transistor -- ISG6108QA	Currently not available for sale in the U.S. The ISG6108 Solid GaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a smart gate driver, and loss-less...
GaN Power Transistor -- ISG6109QA	Currently not available for sale in the U.S. The ISG6109 Solid GaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a smart gate driver, and loss-less...
Silicon Carbide MOSFETs -- MSC015SMA070J Silicon Carbide MOSFETs -- MSC025SMA120J	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Silicon Carbide MOSFET Modules -- HAS175M12BM3 Silicon Carbide MOSFET Modules -- HAS175M12BM3T Silicon Carbide MOSFET Modules -- HAS310M17BM3 Silicon Carbide MOSFET Modules -- HAS310M17BM3T Silicon Carbide MOSFET Modules -- HAS350M12BM3 Silicon Carbide MOSFET Modules -- HAS350M12BM3T Silicon Carbide MOSFET Modules -- HAS530M12BM3 Silicon Carbide MOSFET Modules -- HAS530M12BM3T	Technical Features Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe...
RF Power Transistor -- IB1011M190	AVIONICS-190W-TRANSI STOR
RF Power Transistor -- IB1011M20	AVIONICS-20W-TRANSIS TOR
RF Power Transistor -- IB1011M70	AVIONICS-70W-TRANSIS TOR
Overvoltage Braking Transistor -- M3452-D1200CK10-R7 Overvoltage Braking Transistor -- M3452-D600CK6-R7E Overvoltage Braking Transistor -- M3452-E1600M14-R7 Overvoltage Braking Transistor -- M3452-H1200K10-R7 Overvoltage Braking Transistor -- M3452-H9C-R050 Overvoltage Braking Transistor -- M3452-H9C-R108 Overvoltage Braking Transistor -- M3452-L150N1200B7-A Overvoltage Braking Transistor -- M3452-L200N1200K6-A Overvoltage Braking Transistor -- M3452-L200N1200K6-R5 Overvoltage Braking Transistor -- M3452-L75N1200B7-A Overvoltage Braking Transistor -- M3452-U1200YK10-R7E Overvoltage Braking Transistor -- M3452-U150YB7-A Overvoltage Braking Transistor -- M3452-U1600HM14-R7 Overvoltage Braking Transistor -- M3452-U1600HM14-R7E Overvoltage Braking Transistor -- M3452-U1600YM14-R7 Overvoltage Braking Transistor -- M3452-U1600YM14-R7EIP Overvoltage Braking Transistor -- M3452-U600YK6-A Overvoltage Braking Transistor -- M3452-U600YK6-R7E Overvoltage Braking Transistor -- M3452-U800YK9-R7E	Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works...
Overvoltage Braking Transistor -- M3575T-H600-N77	Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3575T and...
Overvoltage Braking Transistor -- M3452-E300K6-A	Bonitron Braking Transistors are used with AC drives to allow full power brakingand eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works with...
Overvoltage Braking Transistor -- M3452-U200YK6-A Overvoltage Braking Transistor -- M3452-U800YK9-A	Bonitron M3345 Line Regens are the energy efficient way to prevent overvoltage faults on AC Drives. By returning energy to the AC supply line, energy is reclaimed that would otherwise...
Overvoltage Braking Transistor -- M3452-C150B7-A Overvoltage Braking Transistor -- M3452-C1600M14-R7E Overvoltage Braking Transistor -- M3452-C600K6-R7E Overvoltage Braking Transistor -- M3452-H8C-R018 Overvoltage Braking Transistor -- M3452-U1200HK10-R7 Overvoltage Braking Transistor -- M3452-U800HK9R7	Combination Braking Modules are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. Bonitron Combination Braking...
GaN Power Transistor -- INN040FQ043A-Q GaN Power Transistor -- INN080LA080A-Q GaN Power Transistor -- INN100W135A-Q GaN Power Transistor -- INN650T050AH GaN Power Transistor -- INN650TA30AH GaN Power Transistor -- INN650TA50AH GaN Power Transistor -- INN650TA70AH	Currently not available for sale in the U.S.
GaN Power Transistor -- ISG3201	Currently not available for sale in the U.S. 100V Half-Bridge Solid-GaN Integrating Gate Driver The ISG3201 is a 100V Copak product in Innoscience’s SolidGaN family. It integrates two 100V enhancement...
GaN Power Transistor -- INN650DA190A GaN Power Transistor -- INN650DA350A GaN Power Transistor -- INN650DA500A GaN Power Transistor -- INN650DA600A	Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm x 6 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN650D080BS GaN Power Transistor -- INN650D190A	Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN700DA190B GaN Power Transistor -- INN700DA350B GaN Power Transistor -- INN700DA600B GaN Power Transistor -- INN700DC140A GaN Power Transistor -- INN700DC240A GaN Power Transistor -- INN700DC350A	Currently not available for sale in the U.S. 700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN700D140C GaN Power Transistor -- INN700D190C GaN Power Transistor -- INN700D240C	Currently not available for sale in the U.S. 700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN700TK190B GaN Power Transistor -- INN700TK240B GaN Power Transistor -- INN700TK350B GaN Power Transistor -- INN700TK480B GaN Power Transistor -- INN700TK600B	Currently not available for sale in the U.S. 700V GaN-on-Silicon Enhancement-mode Power Transistor in TO-252 package Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge...
GaN Power Transistor -- INN100W027A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in WLCSP with 3.5 mm x 2.13 mm package size. Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN040W048A	Currently not available for sale in the U.S. Bi-directional GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance. Features Bi-directional blocking capability...
GaN Power Transistor -- INV100FQ030A	Currently not available for sale in the U.S. Bi-directional GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 4.0mm x 6.0 mm package size. Features Bi-directional blocking capability GaN-on-Silicon E-mode...
GaN Power Transistor -- INN040FQ012A	Currently not available for sale in the U.S. Bi-directional GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 6mm x 4 mm package size. Features Bi-directional blocking capability GaN-on-Silicon E-mode...
GaN Power Transistor -- INN100EQ025A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in En-FCQFN with 3.0 mm x 5.0 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN150EQ032A GaN Power Transistor -- INN150EQ070A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0 mm package size Features GaN-on-Silicon E-mode HEMT technology Industry...
GaN Power Transistor -- INN100EQ016A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0mm package size Features GaN-on-Silicon E-mode HEMT technology Very low...
GaN Power Transistor -- INN040LA015A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCLGA with 5 mm x 4 mm package size. Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN040FQ045A-Q	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size Features AEC-Q101 Qualified GaN-on-Silicon E-mode HEMT...
GaN Power Transistor -- INN040FQ043A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN100FQ016A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN030FQ015A GaN Power Transistor -- INN040FQ015A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN150LA070A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size Features GaN-on-Silicon E-mode...
GaN Power Transistor -- INN100W070A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in Solder Bar WLCSP with 2.5 mm x 1.5 mm package size. Features GaN-on-Silicon E-mode HEMT...
GaN Power Transistor -- INN100W14	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) with ultra-low on resistance. Features GaN-on-Silicon E-mode HEMT technology Dual Channels, Common Source Ultra High Switching...
RF Power Transistor -- MRFE6S9060NR1	Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications...
RF Power Transistor -- MRF141 RF Power Transistor -- MRF141G RF Power Transistor -- MRF141MP RF Power Transistor -- MRF151 RF Power Transistor -- MRF151A RF Power Transistor -- MRF151G	Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
RF Power Transistor -- MRF173	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF173CQ	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF177	Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
RF Power Transistor -- MRF175GU RF Power Transistor -- MRF175GV RF Power Transistor -- MRF176GU RF Power Transistor -- MRF176GV	Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
RF Power Transistor -- MRF175LU	Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz frequency range. The high power, high gain and broadband performance of each device makes...
RF Power Transistor -- MRF275L	Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid...
RF Power Transistor -- MMRF1014NT1	Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MRF148A RF Power Transistor -- MRF148AMP	Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
RF Power Transistor -- MRF158	Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
RF Power Transistor -- MRF136Y	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
RF Power Transistor -- MRF136	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
RF Power Transistor -- MRF134	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.
RF Power Transistor -- MRF448A	Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
RF Power Transistor -- MRF154	Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
RF Power Transistor -- MRF157 RF Power Transistor -- MRF157MP	Designed primarily for linear large-signal output stages to 80 MHz.
RF Power Transistor -- MRF140 RF Power Transistor -- MRF140MP	Designed primarily for linear large-signal output stages up to 150 MHz frequency range.
RF Power Transistor -- MRF150 RF Power Transistor -- MRF150MP	Designed primarily for linear large-signal output stages up to150 MHz frequency range.
RF Power Transistor -- MRF160 RF Power Transistor -- MRF166C	Designed primarily for wideband large-signal output and driver from 30-500 MHz.
RF Power Transistor -- MRF275G	Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
RF Power Transistor -- MRF171A RF Power Transistor -- MRF171AMP	Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
RF Power Transistor -- MRF166W	Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
RF Power Transistor -- MRF174	Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.
Silicon Carbide MOSFETs -- MSC015SMA070B Silicon Carbide MOSFETs -- MSC017SMA120B Silicon Carbide MOSFETs -- MSC017SMA120B4 Silicon Carbide MOSFETs -- MSC017SMA120J Silicon Carbide MOSFETs -- MSC017SMA120S Silicon Carbide MOSFETs -- MSC025SMA120B	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
RF Power Transistor -- MAGX-000035-01000P	GaN Wideband 10W CW/Pulsed Transistor in Plastic Package DC-3.5 GHz. The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the wide RF frequency capability, reliable high voltage operation...
RF Power Transistor -- MAGX-011086	GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high...
RF Power Transistor -- GTVA107001EC-V1-R0	GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
RF Power Transistor -- GTVA126001EC-V1-R0	GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
Overvoltage Braking Transistor -- M3452-C200K6,A Overvoltage Braking Transistor -- M3452-C600K3,A Overvoltage Braking Transistor -- M3452-C600K6,A Overvoltage Braking Transistor -- M3452-H200K6,A Overvoltage Braking Transistor -- M3452-H300K6 Overvoltage Braking Transistor -- M3452-H300K6,A Overvoltage Braking Transistor -- M3452-H600K6,A Overvoltage Braking Transistor -- M3452-H800K9 Overvoltage Braking Transistor -- M3452-H800K9,A Overvoltage Braking Transistor -- M3452-U300CK6,A Overvoltage Braking Transistor -- M3452-U600CK6,A Overvoltage Braking Transistor -- M3452-U600HK6,A Overvoltage Braking Transistor -- M3452-U800CK9,A	Heavy Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Braking Transistor and Braking Resistor modules are used with AC drives to eliminate overvoltage faults. The use of these modules...
RF Power Transistor -- MMRF1305HSR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military...
RF Power Transistor -- MMRF1306HR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and...
RF Power Transistor -- MRFE6VP61K25HR5	High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land...
RF Power Transistor -- MRF455	In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
RF Power Transistor -- IGN1011L1200	L-BAND-1200W -TRANSISTOR
RF Power Transistor -- IGNP0912M2400	L-BAND-AVIONICS-2400 W PALLET
RF Power Transistor -- IGN0912M2400	L-BAND-AVIONICS-2400 W TRANSISTOR
RF Power Transistor -- IGN1011S3600 RF Power Transistor -- IGN1030S3600	L-BAND-AVIONICS-3600 W-TRANSISTOR
RF Power Transistor -- IGNP0912S5000 RF Power Transistor -- IGNP1030S5000	L-BAND-AVIONICS-5000 W PALLET
RF Power Transistor -- IGN0912S5000 RF Power Transistor -- IGN1030S5000	L-BAND-AVIONICS-5000 W TRANSISTOR
RF Power Transistor -- IGT1011S500	L-BAND-AVIONICS-500W TRANSISTOR
RF Power Transistor -- IGNP1300S3600	L-BAND-ISM-3600W-PAL LET
RF Power Transistor -- IGN1300S3600	L-BAND-ISM-3600W-TRA NSISTOR
RF Power Transistor -- IGNP1214M3200	L-BAND-RADAR-3200W-P ALLET
RF Power Transistor -- IGN1214M3200	L-BAND-RADAR-3200W-T RANSISTOR
RF Power Transistor -- MMRF1312GSR5	MMRF1312GSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HR5	MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HSR5	MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MRFE6VP6300HSR5	N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and...
RF Power Transistor -- MMRF1020-04GNR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
RF Power Transistor -- MMRF1004GNR1	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
RF Power Transistor -- MMRF1007HSR5 RF Power Transistor -- MMRF1008HR5	N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications,...
GaN Power Transistor -- ISG6121TD	Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany.
GaN Power Transistor -- INN650D140A GaN Power Transistor -- INN650D240A GaN Power Transistor -- INN700D350B GaN Power Transistor -- INN700DA480B	Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany. Currently...
GaN Power Transistor -- INN650D350A GaN Power Transistor -- INN650DA140A GaN Power Transistor -- INN650DA240A GaN Power Transistor -- INN650TA050AH GaN Power Transistor -- INN650TA070AH	Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany. Currently...
RF Power Transistor -- MRF6V10010NR4	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device...
RF Power Transistor -- MRF6S24140HR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed primarily for large - signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific...
RF Power Transistor -- MRF6V14300HR5 RF Power Transistor -- MRF6V14300HSR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
RF Power Transistor -- MRFE6VP61K25HSR6	RF Power Field Effect Transistors. High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog...
RF Power Transistor -- MRF6V12500HR5 RF Power Transistor -- MRF6V12500HSR5	RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in...
RF Power Transistor -- MRFE6VS25LR5 RF Power Transistor -- MRFE6VS25NR1	RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness...
RF Power Transistor -- MRF6V12250HR5 RF Power Transistor -- MRF6V12250HSR5 RF Power Transistor -- MRF6VP121KHR5	RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
GaN Power Transistor -- INN040W080A GaN Power Transistor -- INN150FQ070A GaN Power Transistor -- ISG6123TH GaN Power Transistor -- ISG6124TH Overvoltage Braking Transistor -- M3452-E150B7-A Power BJT Transistor -- JANTX2N2222AUA Power BJT Transistor -- JANTX2N2905A Power BJT Transistor -- JANTX2N2907AUA Power BJT Transistor -- JANTX2N3421 Power BJT Transistor -- JANTX2N5339 Power IGBT Transistor -- MDB6U600/810-750F,08473063AA Power MOSFET Transistor -- IPS5451S Power MOSFET Transistor -- IRF510PBF Power MOSFET Transistor -- IRF740 RF Power Transistor -- GTRB184402FC-V1-R0 RF Power Transistor -- GTRB184402FC-V1-R2 RF Power Transistor -- GTRB186002FC-P4 RF Power Transistor -- GTRB186002FC-V1-R0 RF Power Transistor -- GTRB186002FC-V1-R2 RF Power Transistor -- GTRB204402FC/1-V1-R0 RF Power Transistor -- GTRB204402FC/1-V1-R2 RF Power Transistor -- GTRB206002FC/1-V1-R0 RF Power Transistor -- GTRB206002FC/1-V1-R2 RF Power Transistor -- GTRB224402FC-V1-R0 RF Power Transistor -- GTRB224402FC-V1-R2 RF Power Transistor -- GTRB226002FC-V1-R0 RF Power Transistor -- GTRB226002FC-V1-R2 RF Power Transistor -- GTRB246608FC-V1-R0 RF Power Transistor -- GTRB266502FC-V1-R2 RF Power Transistor -- GTRB266908FC-V1-R0 RF Power Transistor -- GTRB266908FC-V1-R2 RF Power Transistor -- GTRB267008FC-V1-R2 RF Power Transistor -- GTRB424908FC1V1-R0 RF Power Transistor -- GTVA107001FC-V1-R0 RF Power Transistor -- GTVA126001FC-V1-R0 RF Power Transistor -- GTVA212701FA-V2-R2 RF Power Transistor -- GTVA220701FA-V1-R2 RF Power Transistor -- GTVA261701FA-V1-R2 RF Power Transistor -- GTVA261802FC-V1-R2 RF Power Transistor -- GTVA262711FA-V2-R2 RF Power Transistor -- GTVA263202FC-V1-R2 RF Power Transistor -- IB0810M100 RF Power Transistor -- IB0810M12 RF Power Transistor -- IB0912M210 RF Power Transistor -- IB0912M500 RF Power Transistor -- IB1011L470 RF Power Transistor -- IB1011M660 RF Power Transistor -- IB1011S1000 RF Power Transistor -- IB1011S1500 RF Power Transistor -- IB1012S35A RF Power Transistor -- IB1012S5A RF Power Transistor -- IB1214M300 RF Power Transistor -- IB1214M375 RF Power Transistor -- IB3043 RF Power Transistor -- IB3135MH20 RF Power Transistor -- IB3135MH5 RF Power Transistor -- IB3149 RF Power Transistor -- IBP1214M700A RF Power Transistor -- IBP3137 RF Power Transistor -- ICPB1010-1-110I RF Power Transistor -- ICPB1020-1-110I RF Power Transistor -- ICPB2002-1-110I RF Power Transistor -- ICPB2005-1-110I RF Power Transistor -- IDL407A RF Power Transistor -- IDL408A RF Power Transistor -- IGN0450L1250 RF Power Transistor -- IGN0450M1500 RF Power Transistor -- IGN0912L250M RF Power Transistor -- IGN0912LM500 RF Power Transistor -- IGN1011M15 RF Power Transistor -- IGN1011S350 RF Power Transistor -- IGN1214M1600 RF Power Transistor -- IGN1214M500R2 RF Power Transistor -- IGN2425S1500 RF Power Transistor -- IGN2729M1700 RF Power Transistor -- LF2805A RF Power Transistor -- MAGB-101836-025B0P RF Power Transistor -- MAGB-103338-050S0P RF Power Transistor -- MAGX-011086A RF Power Transistor -- MAGX-101011-700E00 RF Power Transistor -- MAGX-101050-002C0P RF Power Transistor -- MAPC-A1002-AD000 RF Power Transistor -- MAPC-A1101-AS000 RF Power Transistor -- MAPC-A1101-ASTR1 RF Power Transistor -- MAPC-A1102-AB00 RF Power Transistor -- MAPC-A1102-AS000 RF Power Transistor -- MAPC-A1109-AQ000 RF Power Transistor -- MAPC-A1110-AP000 RF Power Transistor -- MAPC-A1500-AS000 RF Power Transistor -- MAPC-A1501-AS000 RF Power Transistor -- MAPC-A1521-AS000 RF Power Transistor -- MAPC-A1522-AS000 RF Power Transistor -- MAPC-A1525-AS000 RF Power Transistor -- MAPC-A1533-AQ000 RF Power Transistor -- MAPC-A1534-AS000 RF Power Transistor -- MAPC-A1558-AB000 RF Power Transistor -- MAPC-A1559-AS000 RF Power Transistor -- MAPC-A2004-BDTR1 RF Power Transistor -- MAPC-A2517-AS000 RF Power Transistor -- MAPC-A3001-AB000 RF Power Transistor -- MAPC-A3002-AP000 RF Power Transistor -- MAPC-A3005-ADTR1 RF Power Transistor -- MAPC-A3005-AS000 RF Power Transistor -- MAPC-A3006-AS000 RF Power Transistor -- MAPC-A3007-ADTR1 RF Power Transistor -- MAPC-A3008-AB000 RF Power Transistor -- MAPC-A3010-AB000 RF Power Transistor -- MAPC-A3014-AD000 RF Power Transistor -- MAPC-A3014-ADTR1 RF Power Transistor -- MAPC-A3025-AD000 RF Power Transistor -- MAPC-A3029-AB000 RF Power Transistor -- MAPC-A3030-AB000 RF Power Transistor -- MAPC-A3033-AP000 RF Power Transistor -- MAPC-A4015-AS000 RF Power Transistor -- MAPC-A4024-AB000 RF Power Transistor -- MAPC-A4027-AB000 RF Power Transistor -- MAPC-A4029-AB000 RF Power Transistor -- MAPC-A4031-AB000 RF Power Transistor -- MAPC-A4032-AB000 RF Power Transistor -- MAPC-C18640-DP000 RF Power Transistor -- MAPC-C20130-CD000 RF Power Transistor -- MAPC-C22440-BS000 RF Power Transistor -- MAPC-C40450-CP000 RF Power Transistor -- MAPC-C50060-AD000 RF Power Transistor -- MAPHST0045 RF Power Transistor -- MAPL-000817-012CPC RF Power Transistor -- MAPR-000912-500S00 RF Power Transistor -- MAPR-002729-170M00 RF Power Transistor -- MAPRST0912-350 RF Power Transistor -- MAPRST0912-50 RF Power Transistor -- MAPRST1030-1KS RF Power Transistor -- MATR-001214-XL4200 RF Power Transistor -- MATR-002735-637100 RF Power Transistor -- MPAL3035M15 RF Power Transistor -- MRF10005 RF Power Transistor -- MRF1000MB RF Power Transistor -- MRF10031 RF Power Transistor -- MRF1004MB RF Power Transistor -- MRF10120 RF Power Transistor -- MRF10150 RF Power Transistor -- MRF10350 RF Power Transistor -- MRF10502 RF Power Transistor -- MRF1090MB RF Power Transistor -- MRF1150MB RF Power Transistor -- MRF16006 RF Power Transistor -- MRF313 RF Power Transistor -- MRF314 RF Power Transistor -- MRF316 RF Power Transistor -- MRF317 RF Power Transistor -- MRF321 RF Power Transistor -- MRF323 RF Power Transistor -- MRF327 RF Power Transistor -- MRF392 RF Power Transistor -- MRF393 RF Power Transistor -- MRF421 RF Power Transistor -- MRF422 RF Power Transistor -- MRF422MP RF Power Transistor -- MRF426 RF Power Transistor -- MRF429 RF Power Transistor -- MRF448 RF Power Transistor -- MRF454 RF Power Transistor -- MRF455MP RF Power Transistor -- MRF8VP13350NR5 RF Power Transistor -- MRFE6VP6300GSR5 RF Power Transistor -- MRFX1K80GNR5 RF Power Transistor -- MS1227D RF Power Transistor -- MS2248 RF Power Transistor -- MS2279 RF Small Signal Transistor Bipolar/HBT -- JAN2N2905A RF Small Signal Transistor Bipolar/HBT -- JANS2N2219A RF Small Signal Transistor Bipolar/HBT -- JANTX2N2222A RF Small Signal Transistor Bipolar/HBT -- JANTX2N2484 RF Small Signal Transistor Bipolar/HBT -- JANTX2N2907A RF Small Signal Transistor Bipolar/HBT -- JANTX2N2907AUB RF Small Signal Transistor Bipolar/HBT -- JANTX2N3440 RF Small Signal Transistor Bipolar/HBT -- JANTX2N3700 RF Small Signal Transistor Bipolar/HBT -- JANTX2N6988 RF Small Signal Transistor Bipolar/HBT -- JANTX2N7373 RF Small Signal Transistor Bipolar/HBT -- JANTXV2N6301 RF Small Signal Transistor Bipolar/HBT -- MAT020000C RF Small Signal Transistor Bipolar/HBT -- MAT020903H RF Small Signal Transistor Bipolar/HBT -- MAT030000C RF Small Signal Transistor Bipolar/HBT -- MRF587 RF Small Signal Transistor MOSFET -- LND150N8-G RF Small Signal Transistor Silicon Carbide -- JAN2N1711 RF Small Signal Transistor Silicon Carbide -- JANTX2N3019S Silicon Carbide MOSFETs -- MSC011SMB120B4N Silicon Carbide MOSFETs -- MSC011SMB120SDT/R Silicon Carbide MOSFETs -- MSC011SMC120B4N Silicon Carbide MOSFETs -- MSC015SMA070B4N Silicon Carbide MOSFETs -- MSC015SMA070SCT/R Silicon Carbide MOSFETs -- MSC017SMA120B4N Silicon Carbide MOSFETs -- MSC020SMB120B4N Silicon Carbide MOSFETs -- MSC020SMB120SDT/R Silicon Carbide MOSFETs -- MSC025SMA120B4N Silicon Carbide MOSFETs -- MSC025SMA120SCT/R	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- IGN2631M1400	S-BAND-DIRECTED-ENER GY-1500W TRANSISTOR
RF Power Transistor -- IGN2731L10	S-BAND-RADAR-10W TRANSISTOR
RF Power Transistor -- IGN3000S2700	S-BAND-SCIENTIFIC-27 00W TRANSISTOR
Overvoltage Braking Transistor -- M3575T-H125 Overvoltage Braking Transistor -- M3575T-H15 Overvoltage Braking Transistor -- M3575T-H150 Overvoltage Braking Transistor -- M3575T-H200 Overvoltage Braking Transistor -- M3575T-H30 Overvoltage Braking Transistor -- M3575T-H300 Overvoltage Braking Transistor -- M3575T-H600 Overvoltage Braking Transistor -- M3575T-H75 Overvoltage Braking Transistor -- M3575T-L60 Overvoltage Braking Transistor -- M3675T-U10	Standard Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Dynamic Braking Transistor and Dynamic Braking Resistor Modules are used with AC drives to dissipate regenerated energy and eliminate overvoltage...
RF Power Transistor -- GTRB264318FC-V1-R0	The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a...
RF Power Transistor -- GTRB267008FC-V1-R0	The GTRB267008FC-V1 is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496...
RF Power Transistor -- GTRB384608FC-V1-R0	The GTRB384608FC-V1 is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications. Featuring an Asymmetric Doherty Design, the...
RF Power Transistor -- GTVA101K42EV-V1-R0	The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package...
RF Power Transistor -- GTVA104001FA-V1-R0	The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA212701FA-V2-R0	The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA220701FA-V1-R0	The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA261701FA-V1-R0	The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA261802FC-V1-R0	The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package...
RF Power Transistor -- GTVA262701FA-V2-R0	The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
RF Power Transistor -- GTVA262711FA-V2-R0	The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA263202FC-V1-R0	The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
GaN Power Transistor -- ISG3204LA	The ISG3204 is a 100V, 60A, half-bridge SolidGaN in a compact 5mm x 6.5mm LGA package. Included in the package are two high-performance GaN FETs, drivers, and driver supply capacitors,...
RF Power Transistor -- MAGB-103340-015B0P	The MAGB-103340-015B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.3 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGB-103740-008B0P	The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGX-100027-002S0P	The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-002STP	The MAGX-100027-002S0P is a GaN on Si HEMTD-mode transistor suitable for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsto 2 W...
RF Power Transistor -- MAGX-100027-015STP	The MAGX-100027-015S0P is a high power GaN on Silicon HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-050C0P	The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-050CTP	The MAGX-100027-050CTP is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-100C0P	The MAGX-100027-100C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 100 W...
RF Power Transistor -- MAGX-100027-100CTP	The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-300C0P	The MAGX-100027-300C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 300 W...
RF Power Transistor -- MAGX-100027-300CTP	The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAPC-A1000-AD000 RF Power Transistor -- MAPC-A1000-ADTR1	The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25...
RF Power Transistor -- MAPC-A1100-AS000	The MAPC-A1100 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 3.5 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of...
RF Power Transistor -- MAPC-A1103-ASTR1	The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with...
RF Power Transistor -- MAPC-A1103-AS000	The MAPC-A1103 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 2.7 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of...
RF Power Transistor -- MAPC-A1500-AB000 RF Power Transistor -- MAPC-A1500-ABTR1	The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1...
RF Power Transistor -- MAPC-A1511-AS000	The MAPC-A1511 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for 3 - 700 MHz frequency operation. The device supports both pulsed and CW operation with minimum output...
RF Power Transistor -- MAPC-A4004-AB000	The MAPC-A4004 is a 150 W packaged amplifier fully matched to 50 Ohm at both input and output ports. Utilizing the high performance, 50 V GaN on SiC production process,...
RF Power Transistor -- MAPC-A4017-AB000	The MAPC-A4017 is a 130 W package amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 5.85 - 6.75 GHz Satcom applications.
RF Power Transistor -- MAPC-A4019-AB000	The MAPC-A4019 is a 60 W package amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 5.85 - 6.75 GHz Satcom applications.
RF Power Transistor -- MAPC-A4020-AB000	The MAPC-A4020 is a 60 W packaged amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 7.7 - 8.5 GHz Satcom applications.
RF Power Transistor -- MAPC-A4021-AB000	The MAPC-A4021 is a 130 W package amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 7.7 - 8.5 GHz Satcom applications.
RF Power Transistor -- MAPC-A4030-AB000	The MAPC-A4030 is a Gallium nitride (GaN) amplifier designed specifically with high efficiency and high power for the 3.1 - 3.5 GHz S-Band radar band. The amplifier is matched to...
RF Power Transistor -- MHT1803A	The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz. Features Characterized from 30 to 50...
RF Power Transistor -- MMRF1050HR6	The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
RF Power Transistor -- MMRF5018HSR5	The MMRF5018HSR5 is a 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high...
RF Power Transistor -- MRF300AN RF Power Transistor -- MRF300BN	The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and...
RF Power Transistor -- MRFE6VP5600HR5	The MRFE6VP5600HR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HR6	The MRFE6VP5600HR6 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HSR5	The MRFE6VP5600HSR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP6300HR5	The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFX035HR5	The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from...
RF Power Transistor -- MRFX1K80HR5	The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease...
RF Power Transistor -- MRFX1K80NR5	The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease...
RF Power Transistor -- MRF137	The RF MOSFET Line 30W, to 400MHz, 28 V. Designed for wideband large signal output and drive stages up to 400 MHz range.
Silicon Carbide MOSFETs -- MSC015SMA070B4 Silicon Carbide MOSFETs -- MSC015SMA070S Silicon Carbide MOSFETs -- MSC025SMA120B4 Silicon Carbide MOSFETs -- MSC025SMA120S	The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
RF Power Transistor -- MRFE6VP61K25GSR5	These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input...
RF Power Transistor -- MMRF5014HR5	This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
RF Power Transistor -- MRF24G300HSR5	This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MRF8VP13350GNR3	This 350 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of 350 W CW...
RF Power Transistor -- MRF13750HR5 RF Power Transistor -- MRF13750HSR5	This 750 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of CW or pulse...
RF Power Transistor -- MRF101AN RF Power Transistor -- MRF101BN	This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MRFE8VP8600HR5 RF Power Transistor -- MRFE8VP8600HSR5	This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use...
RF Power Transistor -- MMRF1320GNR1	This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows...
RF Power Transistor -- MRFE6VP61K25HR6 RF Power Transistor -- MRFE6VP61K25HSR5	This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and...
RF Power Transistor -- MRFX600GSR5 RF Power Transistor -- MRFX600HR5	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8...
RF Power Transistor -- MRFE6VP6600GNR3 RF Power Transistor -- MRFE6VP6600NR3	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRF1K50HR5	This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications.
RF Power Transistor -- MMRF1308HR5	This high ruggedness device is designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. It's...
RF Power Transistor -- MMRF1310HR5 RF Power Transistor -- MMRF1310HSR5	This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.
RF Power Transistor -- MRF1K50GNR5	This high ruggedness device, MRF1K50GNR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MRF1K50NR5	This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MMRF1314GSR5	This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
RF Power Transistor -- MRF6V12500GSR5	This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.
RF Power Transistor -- IB1011M800	TRANSISTOR-AVIONICS- 800W

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