Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
2-pack-integrated intelligent Power System
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module
3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench technology IGBT|•CAL High Density FWD|•Integrated NTC...
3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology free-wheeling diode|•Integrated NTC temperature...
3-Phase Bridge Rectifier + Brake Chopper|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL Technology FWD|Typical Applications:|•Recti fier
3-Phase Bridge Rectifier + IGBT braking chopper
Features SiC Power MOSFET High Speed Switching Ultra low loss Low RDS(on) Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Applications Welding converters Switched mode power supplies Uninterruptible Power Supply (UPS) EV motor and traction drive Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky diode Zero reverse...
Avionics Power Transistors
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Controllable Bridge Rectifier
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of...
Dual-In-Line Package Intelligent Power Module
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro...
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•DC/DC - converter|•Brake...
Features 1200V SiC Planar MOSFET Single phase inverter topology One screw mounting module Fully compatible with other SEMITOP® Press-Fit types Improved thermal performance by aluminum oxide substrate Ultra Low...
Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding
Features IGBT4 = 4. Generation (Trench) IGBT VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x ICNOM Soft switching 4. Generation CAL diode (CAL4)...
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power...
Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for...
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration M5 power connectors Aluminum Nitride (AlN) substrate for improved...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance...
Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET High-speed switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High-speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended...
Features Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High Short Circuit capability, self limiting to 6 x IC Applications AC Inverter Drives UPS Electronic Welders
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)...
Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
H-bridge inverter. Features • Trench IGBTs • Robust and soft freewheeling diode in CAL technology • Highly reliable spring contacts for electrical connection • UL recognised file no. E63532. Typical...
H-bridge inverter
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Low tail current with low temperature dependence|•Integrat ed PTC temperature sensor|Typical Applications:|•Switc...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Ultra Fast NPT IGBT technology|•Vce,sat with positive coefficient|Typical Applications:|•Switc hing (not for...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|•Fast...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel, homogeneous Silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor...
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|Typical Applications:|•3 Level Inverter|•UPS
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Ultrafast NPT technology IGBT|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter
IGBT Module|•MOS input (voltage controlled)|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse...
IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper...
IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 42 kVA|•Typ. motor power...
IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 50 kVA|•Typ. motor power...
IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•H igh short circuit capability,...
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature...
MiniSKiiP® 3 Features Trench 4 IGBT´s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections Typical Applications Inverter up to 41 kVA Typical motor...
MOSFET Module Features Compact Design One screw mounting Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB) Trench Technology Short internal connections and low inductance case Typical...
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristics|•Sho rt internal connections avoid oscillations|•Isolat ed copper baseplates|•All electrical connections on top for easy busbaring|•Large clearance (10mm) and creepage distances (13mm)|•UL recognized, file...
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy...
Powerex has expanded the HVIGBT module product line with the development of the QID3320004 3300V 200A Dual IGBT low profile module. This module makes use of the latest Mitsubishi R-Series...
Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of...
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the...
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast...
Radar Power Transistors
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
SEMITOP® 3 IGBT Module Features Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL Technology FWD Integrated...
Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20...
SEMITRANS® 2. Trench IGBT Modules Features Homogenous Si Trench=Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting ti 6 x Ic Typical Applications AC inverter drives...
SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items...
SEMiX® offers users a high degree of flexibility in system configuration. Inverters, for instance, can be constructed either with compact sixpacks (SEMiX® 13/33c) or with thermally decoupled half bridges in...
SKiiP® 3 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction...
SKiiP® 3. 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction...
SKiiP® 3 Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction Elevators Industrial drives Items...
SKiiP® 4. 2-pack-integrated intelligent Power System Features Intelligent Power Module Integrated current and temperature measurement Integrated DC-link measurement Solder free power section IGBT4 and CAL4F technology Safety isolated switching and...
Split Dual Si/SiC Hybrid IGBT Module. Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft...
SPT IGBT Module|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz...
Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped...
Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos.
Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT- Non Punch-Through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff.
The MSCSM120DUM027AG device is a 1200V/733A dual common source silicon carbide (SiC) MOSFET powermodule. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray...
The MSCSM120DUM042AG device is a 1200V/495A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM08T3AG device is a 1200V/337A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM11T3AG device is a 1200V/254A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM120TLM11CAG device is a three level inverter 1200V/251A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM120TLM16C3AG device is a 1200V/173A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM120TLM31C3AG device is a 1200V/89A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse...
The MSCSM170DUM058AG device is a 1700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM11T3AG device is a 1700V/240A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM15T3AG device is a 1700V/181A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM23T3AG device is a 1700V/124A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170TLM15CAG device is a three level inverter 1700V/179A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70DUM017AG device is a 700V/1021A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM025AG device is a 700V/689A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM10T3AG device is a 700V/241A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM07CAG device is a 700V/349A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70TLM19C3AG device is a 700V/124A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70TLM44C3AG device is a 700V/58A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The NPA1006A is a GaN on silicon amplifieroptimized for 20 - 1000 MHz operation. Thisamplifier has been designed for saturated and linearoperation with output levels to 12.5 W (41 dBm)assembled...
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W...
The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W...
The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain...
The Series C60 solid-state relay is an advanced design capable of switching very heavy loads in a physically small 6-pin mini DIP package. These relays have a power FET output...
Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer...
Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 50A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 30A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 50A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 15A/1200V (CSTBT) Application AC 400V three phase motor inverter...
Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 35A/1200V (CSTBT) Application AC 400V three phase motor inverter...
Trench IGBT Module (in Half-Bridge configuration).
Trench IGBT Module
Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper...
Trench IGBT Modules
Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications...
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport...
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding
Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders
Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Elect ronic welders|•AC inverter drives|•UPS
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper...
Wireless Bipolar Power Transistors

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