Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 2-pack-integrated intelligent Power System | |
| 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module | |
| 3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench technology IGBT|•CAL High Density FWD|•Integrated NTC... | |
| 3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology free-wheeling diode|•Integrated NTC temperature... | |
| 3-Phase Bridge Rectifier + Brake Chopper|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL Technology FWD|Typical Applications:|•Recti fier | |
| 3-Phase Bridge Rectifier + IGBT braking chopper | |
| Features SiC Power MOSFET High Speed Switching Ultra low loss Low RDS(on) Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very... | |
| Applications Welding converters Switched mode power supplies Uninterruptible Power Supply (UPS) EV motor and traction drive Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky diode Zero reverse... | |
| Avionics Power Transistors | |
| Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Controllable Bridge Rectifier | |
| Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. | |
| DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of... | |
| Dual-In-Line Package Intelligent Power Module | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro... | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•DC/DC - converter|•Brake... | |
| Features 1200V SiC Planar MOSFET Single phase inverter topology One screw mounting module Fully compatible with other SEMITOP® Press-Fit types Improved thermal performance by aluminum oxide substrate Ultra Low... | |
| Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding | |
| Features IGBT4 = 4. Generation (Trench) IGBT VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x ICNOM Soft switching 4. Generation CAL diode (CAL4)... | |
| Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for... | |
| Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration M5 power connectors Aluminum Nitride (AlN) substrate for improved... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance... | |
| Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for... | |
| Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient... | |
| Features SiC Power MOSFET High-speed switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on... | |
| Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low... | |
| Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very... | |
| Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low... | |
| Features SiC Power MOSFET Low RDS(on) High-speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very... | |
| Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended... | |
| Features Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High Short Circuit capability, self limiting to 6 x IC Applications AC Inverter Drives UPS Electronic Welders | |
| Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)... | |
| Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| H-bridge inverter. Features • Trench IGBTs • Robust and soft freewheeling diode in CAL technology • Highly reliable spring contacts for electrical connection • UL recognised file no. E63532. Typical... | |
| H-bridge inverter | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Low tail current with low temperature dependence|•Integrat ed PTC temperature sensor|Typical Applications:|•Switc... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Ultra Fast NPT IGBT technology|•Vce,sat with positive coefficient|Typical Applications:|•Switc hing (not for... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|•Fast... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel, homogeneous Silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|Typical Applications:|•3 Level Inverter|•UPS | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Ultrafast NPT technology IGBT|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter | |
| IGBT Module|•MOS input (voltage controlled)|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse... | |
| IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 42 kVA|•Typ. motor power... | |
| IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 50 kVA|•Typ. motor power... | |
| IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•H igh short circuit capability,... | |
| Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature... | |
| MiniSKiiP® 3 Features Trench 4 IGBT´s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections Typical Applications Inverter up to 41 kVA Typical motor... | |
| MOSFET Module Features Compact Design One screw mounting Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB) Trench Technology Short internal connections and low inductance case Typical... | |
| Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristics|•Sho rt internal connections avoid oscillations|•Isolat ed copper baseplates|•All electrical connections on top for easy busbaring|•Large clearance (10mm) and creepage distances (13mm)|•UL recognized, file... | |
| Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy... | |
| Powerex has expanded the HVIGBT module product line with the development of the QID3320004 3300V 200A Dual IGBT low profile module. This module makes use of the latest Mitsubishi R-Series... | |
| Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of... | |
| Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the... | |
| Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast... | |
| Radar Power Transistors | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SEMITOP® 3 IGBT Module Features Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL Technology FWD Integrated... | |
| Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20... | |
| SEMITRANS® 2. Trench IGBT Modules Features Homogenous Si Trench=Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting ti 6 x Ic Typical Applications AC inverter drives... | |
| SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items... | |
| SEMiX® offers users a high degree of flexibility in system configuration. Inverters, for instance, can be constructed either with compact sixpacks (SEMiX® 13/33c) or with thermally decoupled half bridges in... | |
| SKiiP® 3 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction... | |
| SKiiP® 3. 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction... | |
| SKiiP® 3 Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction Elevators Industrial drives Items... | |
| SKiiP® 4. 2-pack-integrated intelligent Power System Features Intelligent Power Module Integrated current and temperature measurement Integrated DC-link measurement Solder free power section IGBT4 and CAL4F technology Safety isolated switching and... | |
| Split Dual Si/SiC Hybrid IGBT Module. Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft... | |
| SPT IGBT Module|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz... | |
| Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped... | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT- Non Punch-Through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. | |
| The MSCSM120DUM027AG device is a 1200V/733A dual common source silicon carbide (SiC) MOSFET powermodule. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray... | |
| The MSCSM120DUM042AG device is a 1200V/495A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120DUM08T3AG device is a 1200V/337A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120DUM11T3AG device is a 1200V/254A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM120TLM11CAG device is a three level inverter 1200V/251A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM120TLM16C3AG device is a 1200V/173A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM120TLM31C3AG device is a 1200V/89A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse... | |
| The MSCSM170DUM058AG device is a 1700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170DUM11T3AG device is a 1700V/240A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170DUM15T3AG device is a 1700V/181A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170DUM23T3AG device is a 1700V/124A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170TLM15CAG device is a three level inverter 1700V/179A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM70DUM017AG device is a 700V/1021A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70DUM025AG device is a 700V/689A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70DUM10T3AG device is a 700V/241A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM70TLM07CAG device is a 700V/349A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM70TLM19C3AG device is a 700V/124A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM70TLM44C3AG device is a 700V/58A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The NPA1006A is a GaN on silicon amplifieroptimized for 20 - 1000 MHz operation. Thisamplifier has been designed for saturated and linearoperation with output levels to 12.5 W (41 dBm)assembled... | |
| The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W... | |
| The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W... | |
| The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include... | |
| The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,... | |
| The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain... | |
| The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain... | |
| The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and... | |
| The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain... | |
| The Series C60 solid-state relay is an advanced design capable of switching very heavy loads in a physically small 6-pin mini DIP package. These relays have a power FET output... | |
| Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer... | |
| Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 50A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer... | |
| Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
| Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 30A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
| Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 50A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
| Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 15A/1200V (CSTBT) Application AC 400V three phase motor inverter... | |
| Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 35A/1200V (CSTBT) Application AC 400V three phase motor inverter... | |
| Trench IGBT Module (in Half-Bridge configuration). | |
| Trench IGBT Module | |
| Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper... | |
| Trench IGBT Modules | |
| Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Elect ronic welders|•AC inverter drives|•UPS | |
| Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| Wireless Bipolar Power Transistors |
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