MACOM RF Power Transistor MAPC-A1000-ADTR1

Description
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage. The MAPC-A1000 has a wide range of applications,includi ng military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.
Request a Quote
Description
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage. The MAPC-A1000 has a wide range of applications,includi ng military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
RF Power Transistor
MAPC-A1000-ADTR1
RF Power Transistor MAPC-A1000-ADTR1
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage. The MAPC-A1000 has a wide range of applications,includi ng military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.

The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage.

The MAPC-A1000 has a wide range of applications,including military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAPC-A1000-ADTR1
Product Name RF Power Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data

Similar Products

1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET - QPD1003 - Qorvo
Specs
Transistor Type IMFET
Transistor Technology / Material GaN
Package Type RF-565
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
40V 43A MOSFET Transistor - 289-AUIRFN8458TR - ERSAELECTRONICS PTE. LTD.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
View Details
7 suppliers