MACOM RF Power Transistor MAPC-A1000-ADTR1

Description
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage. The MAPC-A1000 has a wide range of applications,includi ng military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.
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Description
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage. The MAPC-A1000 has a wide range of applications,includi ng military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.
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Suppliers

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Downers Grove, IL, United States
RF Power Transistor
MAPC-A1000-ADTR1
RF Power Transistor MAPC-A1000-ADTR1
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage. The MAPC-A1000 has a wide range of applications,includi ng military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.

The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25 W (44 dBm) in a 6.5 x 7.0 mm plasticpackage.

The MAPC-A1000 has a wide range of applications,including military radio communications, RADAR,avionics, digital cellular infrastructure, RF energy,and test instrumentation.

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Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAPC-A1000-ADTR1
Product Name RF Power Transistor
Transistor Technology / Material GaN
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