Currently not available for sale in the U.S.
Bi-directional GaN-on-Silicon enhancement mode high-electron-mobili
ty-transistor (HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.
Features
Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on Resistance
Applications
High side load switch
OVP protection in smart phone USB port
Switch circuits in multiple power suppliers system
Currently not available for sale in the U.S.
Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.
Features
- Bi-directional blocking capability
- GaN-on-Silicon E-mode HEMT technology
- Ultra-low on Resistance
Applications
- High side load switch
- OVP protection in smart phone USB port
- Switch circuits in multiple power suppliers system
