Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCGLQ75X065CTYZBNMG

Description
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
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Description
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
Request a Quote
Datasheet
Datasheet Summary
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The MSCGLQ75X065CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module with a 150 g AlSiC base plate and Si₃N₄ substrate in an isolated package suitable for direct heatsink mounting. It includes an internal thermistor and is RoHS compliant. The main IGBTs are rated for 650 V and 75 A continuous current with 0.51 °C/W junction-to-case thermal resistance; the soft start IGBT handles 100 A with 0.37 °C/W; the solenoid IGBTs support 1200 V and 15 A with 1.85 °C/W. SiC diodes support 700 V reverse voltage with junction-to-case thermal resistance of 1.75 °C/W for the main diodes and 4.69 °C/W for solenoid diodes. The operating junction temperature range is -55 °C to 175 °C, and the storage temperature range is -60 °C to 125 °C.

Datasheet Summary
Powered by GS/AI

The MSCGLQ75X065CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module with a 150 g AlSiC base plate and Si₃N₄ substrate in an isolated package suitable for direct heatsink mounting. It includes an internal thermistor and is RoHS compliant. The main IGBTs are rated for 650 V and 75 A continuous current with 0.51 °C/W junction-to-case thermal resistance; the soft start IGBT handles 100 A with 0.37 °C/W; the solenoid IGBTs support 1200 V and 15 A with 1.85 °C/W. SiC diodes support 700 V reverse voltage with junction-to-case thermal resistance of 1.75 °C/W for the main diodes and 4.69 °C/W for solenoid diodes. The operating junction temperature range is -55 °C to 175 °C, and the storage temperature range is -60 °C to 125 °C.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCGLQ75X065CTYZBNMG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCGLQ75X065CTYZBNMG
Silicon Carbide MOSFET Modules MSCGLQ75X065CTYZBNMG
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)

Features

  • SiC Schottky Diode
  • IGBT4
  • Low stray inductance
  • Lead frames for power connections
  • SI3N4 substrate for improved thermal performance
  • AlSiC base plate for extended reliability and reduced weight
  • Extended storage temperature range
  • Internal thermistor for temperature monitoring

Benefits

  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
  • High reliability Power Core Module (PCM)
  • Modular power module for Power Drive Electronic (PDE)
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSCGLQ75X065CTYZBNMG
Product Name Silicon Carbide MOSFET Modules
Package Type HPD
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