Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobili
ty-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0mm package size
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small footprint
Applications
High frequency DC-DC converter
Point of Load
RF envelope tracking
PC charger
Mobile power bank
Motor driver
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small footprint
Applications
- High frequency DC-DC converter
- Point of Load
- RF envelope tracking
- PC charger
- Mobile power bank
- Motor driver
