Wolfspeed Silicon Carbide MOSFET Modules ECB2R8M12YM3

Description
Silicon Carbide, Six-Pack Module Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6 nH) High Performance Si3N4 Insulator Ultra-Reliable Interconnect Technologies AQG-324 Qualification Typical Applications Automotive Traction Inverters Commercial, Construction, and Agricultural Vehicles Hybrid Electric Vehicles E-Mobility and Motor Drives Auxiliary Power Supplies Renewable Energy System Benefits Direct-Cooled Pin Fin Baseplate Industry-Standard Footprint Press-fit Connection for Ease of Assembly Integrated NTC Temperature Sensors
  • Silicon Carbide MOSFET Modules - ECB2R8M12YM3 - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-ECB2R8M12YM3-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Silicon Carbide, Six-Pack Module Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6 nH) High Performance Si3N4 Insulator Ultra-Reliable Interconnect Technologies AQG-324 Qualification Typical Applications Automotive Traction Inverters Commercial, Construction, and Agricultural Vehicles Hybrid Electric Vehicles E-Mobility and Motor Drives Auxiliary Power Supplies Renewable Energy System Benefits Direct-Cooled Pin Fin Baseplate Industry-Standard Footprint Press-fit Connection for Ease of Assembly Integrated NTC Temperature Sensors
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - ECB2R8M12YM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
ECB2R8M12YM3
Silicon Carbide MOSFET Modules ECB2R8M12YM3
Silicon Carbide, Six-Pack Module Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6 nH) High Performance Si3N4 Insulator Ultra-Reliable Interconnect Technologies AQG-324 Qualification Typical Applications Automotive Traction Inverters Commercial, Construction, and Agricultural Vehicles Hybrid Electric Vehicles E-Mobility and Motor Drives Auxiliary Power Supplies Renewable Energy System Benefits Direct-Cooled Pin Fin Baseplate Industry-Standard Footprint Press-fit Connection for Ease of Assembly Integrated NTC Temperature Sensors

Silicon Carbide, Six-Pack Module

Technical Features

  • Fully SiC MOSFET-based for Ultra-Low Loss
  • Comparative Tracking Index (CTI) greater than 600 V for Material Group I
  • Extremely Low Power Loop Inductance (6.6 nH)
  • High Performance Si3N4 Insulator
  • Ultra-Reliable Interconnect Technologies
  • AQG-324 Qualification

Typical Applications

  • Automotive Traction Inverters
  • Commercial, Construction, and Agricultural Vehicles
  • Hybrid Electric Vehicles
  • E-Mobility and Motor Drives
  • Auxiliary Power Supplies
  • Renewable Energy

System Benefits

  • Direct-Cooled Pin Fin Baseplate
  • Industry-Standard Footprint
  • Press-fit Connection for Ease of Assembly
  • Integrated NTC Temperature Sensors
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-ECB2R8M12YM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-ECB2R8M12YM3-ND
FET, MOSFET Arrays 1697-ECB2R8M12YM3-ND
SIC, MODULE, 2.8M, 1200V, 152MM,

SIC, MODULE, 2.8M, 1200V, 152MM,

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Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number ECB2R8M12YM3 1697-ECB2R8M12YM3-ND
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays
Package Type YM3 Module
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