This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.
RF Mosfet 2 N-Channel (Dual) 48V 2.4GHz ~ 2.5GHz 15.3dB 300W NI-780S-4L
RF Mosfet 2 N-Channel (Dual) 48V 2.4GHz ~ 2.5GHz 15.3dB 300W NI-780S-4L
RF MOSFET GAN 48V NI780
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | MRF24G300HSR5 | 568-MRF24G300HSR5CT-ND | MRF24G300HSR5 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flangeless | NI-780S-4L | Surface Mount |
| Power Gain | 15.2 dB |
