NXP Semiconductors RF Power Transistor MRF24G300HSR5

Description
This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.
Request a Quote Datasheet
Description
This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF24G300HSR5 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF24G300HSR5
RF Power Transistor MRF24G300HSR5
This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.

This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.

Supplier's Site Datasheet
RF FETs, MOSFETs - 568-MRF24G300HSR5CT-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-MRF24G300HSR5CT-ND
RF FETs, MOSFETs 568-MRF24G300HSR5CT-ND
RF Mosfet 2 N-Channel (Dual) 48V 2.4GHz ~ 2.5GHz 15.3dB 300W NI-780S-4L

RF Mosfet 2 N-Channel (Dual) 48V 2.4GHz ~ 2.5GHz 15.3dB 300W NI-780S-4L

Buy Now Datasheet
RF FETs, MOSFETs - 568-MRF24G300HSR5TR-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-MRF24G300HSR5TR-ND
RF FETs, MOSFETs 568-MRF24G300HSR5TR-ND
RF Mosfet 2 N-Channel (Dual) 48V 2.4GHz ~ 2.5GHz 15.3dB 300W NI-780S-4L

RF Mosfet 2 N-Channel (Dual) 48V 2.4GHz ~ 2.5GHz 15.3dB 300W NI-780S-4L

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MRF24G300HSR5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MRF24G300HSR5
RF MOSFET GAN 48V NI780

RF MOSFET GAN 48V NI780

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors RF Transistors
Product Number MRF24G300HSR5 568-MRF24G300HSR5CT-ND MRF24G300HSR5
Product Name RF Power Transistor RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material GaN
Package Type Ceramic Flangeless NI-780S-4L Surface Mount
Power Gain 15.2 dB
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