MACOM Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MRF323

Description
Win Source Part Number: 1028374-MRF323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tray Standard Package: 10 Power - Max: 20W Voltage - Collector Emitter Breakdown (Max): 33V Current - Collector (Ic) (Max): 2.2A Gain: 11dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Mounting Type: Chassis Mount Package / Case: 244-04 Supplier Device Package: 244-04, STYLE 1 ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: MACOM Technology Solutions Other Names: 1465-1180
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Description
Win Source Part Number: 1028374-MRF323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tray Standard Package: 10 Power - Max: 20W Voltage - Collector Emitter Breakdown (Max): 33V Current - Collector (Ic) (Max): 2.2A Gain: 11dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Mounting Type: Chassis Mount Package / Case: 244-04 Supplier Device Package: 244-04, STYLE 1 ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: MACOM Technology Solutions Other Names: 1465-1180
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Datasheet
Datasheet Summary
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The 1028374-MRF323 is an NPN silicon power transistor designed for RF applications, specifically optimized for wideband large-signal driver and predriver amplifier stages within the 200,Äì500 MHz frequency range. It operates at a maximum output power of 20 W and is guaranteed to perform at 400 MHz with a collector-emitter voltage of 28 V. The device features a minimum power gain of 10 dB and an efficiency of at least 50%. This transistor has been tested for load mismatch at all phase angles with a voltage standing wave ratio (VSWR) of 30:1, ensuring reliability in various operating conditions. The gold metallization system enhances its durability, while computer-controlled wirebonding provides consistent input impedance. The MRF323 is packaged in a 244-04 case style and is suitable for chassis mounting.

Datasheet Summary
Powered by GS/AI

The 1028374-MRF323 is an NPN silicon power transistor designed for RF applications, specifically optimized for wideband large-signal driver and predriver amplifier stages within the 200,Äì500 MHz frequency range. It operates at a maximum output power of 20 W and is guaranteed to perform at 400 MHz with a collector-emitter voltage of 28 V. The device features a minimum power gain of 10 dB and an efficiency of at least 50%. This transistor has been tested for load mismatch at all phase angles with a voltage standing wave ratio (VSWR) of 30:1, ensuring reliability in various operating conditions. The gold metallization system enhances its durability, while computer-controlled wirebonding provides consistent input impedance. The MRF323 is packaged in a 244-04 case style and is suitable for chassis mounting.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1028374-MRF323 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1028374-MRF323
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1028374-MRF323
Win Source Part Number: 1028374-MRF323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tray Standard Package: 10 Power - Max: 20W Voltage - Collector Emitter Breakdown (Max): 33V Current - Collector (Ic) (Max): 2.2A Gain: 11dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Mounting Type: Chassis Mount Package / Case: 244-04 Supplier Device Package: 244-04, STYLE 1 ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: MACOM Technology Solutions Other Names: 1465-1180

Win Source Part Number: 1028374-MRF323
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Tray
Standard Package: 10
Power - Max: 20W
Voltage - Collector Emitter Breakdown (Max): 33V
Current - Collector (Ic) (Max): 2.2A
Gain: 11dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Mounting Type: Chassis Mount
Package / Case: 244-04
Supplier Device Package: 244-04, STYLE 1
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: MACOM Technology Solutions
Other Names: 1465-1180

Buy Now Datasheet
Bipolar RF Transistors - 1465-1180-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
1465-1180-ND
Bipolar RF Transistors 1465-1180-ND
RF Transistor NPN 33V 2.2A 20W Chassis Mount 244-04, STYLE 1

RF Transistor NPN 33V 2.2A 20W Chassis Mount 244-04, STYLE 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF323 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF323
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF323
TRANS RF NPN 33V 1.1A 244-04

TRANS RF NPN 33V 1.1A 244-04

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1028374-MRF323 1465-1180-ND MRF323
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 244-04
Power Gain 11 dB
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