MACOM RF Power Transistor MRF323

Description
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
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Description
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
Request a Quote
Datasheet
Datasheet Summary
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The 1028374-MRF323 is an NPN silicon power transistor designed for RF applications, specifically optimized for wideband large-signal driver and predriver amplifier stages within the 200,Äì500 MHz frequency range. It operates at a maximum output power of 20 W and is guaranteed to perform at 400 MHz with a collector-emitter voltage of 28 V. The device features a minimum power gain of 10 dB and an efficiency of at least 50%. This transistor has been tested for load mismatch at all phase angles with a voltage standing wave ratio (VSWR) of 30:1, ensuring reliability in various operating conditions. The gold metallization system enhances its durability, while computer-controlled wirebonding provides consistent input impedance. The MRF323 is packaged in a 244-04 case style and is suitable for chassis mounting.

Datasheet Summary
Powered by GS/AI

The 1028374-MRF323 is an NPN silicon power transistor designed for RF applications, specifically optimized for wideband large-signal driver and predriver amplifier stages within the 200,Äì500 MHz frequency range. It operates at a maximum output power of 20 W and is guaranteed to perform at 400 MHz with a collector-emitter voltage of 28 V. The device features a minimum power gain of 10 dB and an efficiency of at least 50%. This transistor has been tested for load mismatch at all phase angles with a voltage standing wave ratio (VSWR) of 30:1, ensuring reliability in various operating conditions. The gold metallization system enhances its durability, while computer-controlled wirebonding provides consistent input impedance. The MRF323 is packaged in a 244-04 case style and is suitable for chassis mounting.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF323 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF323
RF Power Transistor MRF323
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1028374-MRF323 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1028374-MRF323
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1028374-MRF323
Win Source Part Number: 1028374-MRF323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tray Standard Package: 10 Power - Max: 20W Voltage - Collector Emitter Breakdown (Max): 33V Current - Collector (Ic) (Max): 2.2A Gain: 11dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Mounting Type: Chassis Mount Package / Case: 244-04 Supplier Device Package: 244-04, STYLE 1 ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: MACOM Technology Solutions Other Names: 1465-1180

Win Source Part Number: 1028374-MRF323
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Tray
Standard Package: 10
Power - Max: 20W
Voltage - Collector Emitter Breakdown (Max): 33V
Current - Collector (Ic) (Max): 2.2A
Gain: 11dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Mounting Type: Chassis Mount
Package / Case: 244-04
Supplier Device Package: 244-04, STYLE 1
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: MACOM Technology Solutions
Other Names: 1465-1180

Buy Now Datasheet
Bipolar RF Transistors - 1465-1180-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
1465-1180-ND
Bipolar RF Transistors 1465-1180-ND
RF Transistor NPN 33V 2.2A 20W Chassis Mount 244-04, STYLE 1

RF Transistor NPN 33V 2.2A 20W Chassis Mount 244-04, STYLE 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF323 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF323
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF323
TRANS RF NPN 33V 1.1A 244-04

TRANS RF NPN 33V 1.1A 244-04

Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors RF Transistors Transistors Bipolar RF Transistors
Product Number MRF323 1028374-MRF323 1465-1180-ND MRF323
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Ceramic Flanged SOT3 244-04
Power Gain 10 dB 11 dB
Output Power 20 watts 20 watts 20 watts
Operating Frequency 200 to 500 MHz
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