N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
MMRF1008 - Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Win Source Part Number: 1345965-MMRF1008HR5
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Package: Tape & Reel
Standard Package: 50
Voltage - Rated: 100 V
Technology: LDMOS
Frequency: 1.03GHz
Current - Test: 100 mA
Gain: 20.3dB
Voltage - Test: 50 V
Power - Output: 275W
Mounting Type: Chassis Mount
Package / Case: SOT-957A
Supplier Device Package: NI-780H-2L
ECCN: EAR99
Fake Threat In the Open Market: 30 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: NXP USA Inc.
Base Product Number: MMRF1008
Product Status: Last Time Buy
RF MOSFET LDMOS 50V NI780
| Richardson RFPD | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Power MOSFET | RF MOSFET Transistors | RF Transistors |
| Product Number | MMRF1008HR5 | MMRF1008HR5 | 1345965-MMRF1008HR5 | MMRF1008HR5 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | Ceramic Flanged | CFM2F | SOT3 | SOT-957A |
| Power Gain | 20.3 dB | 20.3 dB | ||
| Output Power | 275 watts | 275 watts |
