SICFET N-CH 1200V 66A TO247-4 Product overview: MSC040SMA120B4 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC040SMA120B4 can be used for catalog matching and distributor lookup.
MOSFET SIC 1200 V 40 mOhm TO-247-4
MOSFET SIC 1200 V 40 mOhm TO-247-4
MOSFET SIC 1200 V 40 mOhm TO-247-4
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B4 device is a 1200 V, 40 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.
Features
Benefits
Applications
MOSFET, N-CH, 1.2KV, 66A, TO-247 ROHS COMPLIANT: YES
SICFET N-CH 1200V 66A TO247-4
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Richardson RFPD | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-MSC040SMA120B4 | 2419263 | MSC040SMA120B4 | 29AK2557 | MSC040SMA120B4 |
| Product Name | 1200V 66A MOSFET Transistor | MOSFETs | Silicon Carbide MOSFETs | Mosfet, N-Ch, 1.2Kv, 66A, To-247 Rohs Compliant Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||
| PD | 323 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) |