Wolfspeed Silicon Carbide MOSFETs E3M0075120D

Description
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications EV battery chargers High voltage DC/DC converters
  • Silicon Carbide MOSFETs - E3M0075120D - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-E3M0075120D-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0075120D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications EV battery chargers High voltage DC/DC converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - E3M0075120D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E3M0075120D
Silicon Carbide MOSFETs E3M0075120D
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications EV battery chargers High voltage DC/DC converters

Features

  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • EV battery chargers
  • High voltage DC/DC converters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-E3M0075120D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0075120D-ND
Single FETs, MOSFETs 1697-E3M0075120D-ND
N-Channel 1200V 32A (Tc) 145W (Tc) Through Hole TO-247-3

N-Channel 1200V 32A (Tc) 145W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0075120D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
E3M0075120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs E3M0075120D
1200V AUTOMOTIVE SIC 75MOHM FET

1200V AUTOMOTIVE SIC 75MOHM FET

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number E3M0075120D 1697-E3M0075120D-ND E3M0075120D
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0750 ohms
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
Polarity N-Channel
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