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Company

Product

Description

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DigiKey

Thief River Falls, MN, United States

Single FETs, MOSFETs
1697-E3M0075120D-ND

Single FETs, MOSFETs 1697-E3M0075120D-ND

N-Channel 1200V 32A (Tc) 145W (Tc) Through Hole TO-247-3

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Datasheet

Richardson RFPD

Downers Grove, IL, United States

Silicon Carbide MOSFETs
E3M0075120D

Silicon Carbide MOSFETs E3M0075120D

Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications EV battery chargers High voltage DC/DC converters

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Datasheet

Shenzhen Shengyu Electronics Technology Limited

Futian, China

Discrete Semiconductor Products - Transistors - FETs, MOSFETs
E3M0075120D

Discrete Semiconductor Products - Transistors - FETs, MOSFETs E3M0075120D

1200V AUTOMOTIVE SIC 75MOHM FET

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Technical Specifications

	DigiKey	Richardson RFPD	Shenzhen Shengyu Electronics Technology Limited
Product Category	Transistors	Metal-Oxide Semiconductor FET (MOSFET)	RF Transistors
Product Number	1697-E3M0075120D-ND	E3M0075120D	E3M0075120D
Product Name	Single FETs, MOSFETs	Silicon Carbide MOSFETs	Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity	N-Channel
Transistor Technology / Material	Silicon Carbide
Package Type	TO-247; TO-247-3	TO-247; TO-247-3	TO-247; TO-247-3