Microchip Technology, Inc. MOSFETs MSC035SMA170B4

MOSFET SIC 1700 V 35 mOhm TO-247-4

MOSFET SIC 1700 V 35 mOhm TO-247-4

MOSFET SIC 1700 V 35 mOhm TO-247-4

N-Channel 1700V 68A (Tc) 370W (Tc) Through Hole TO-247-4

Features

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T_J(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS Compliant

Benefits

• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external freewheeling diode
• Lower system cost of ownership

Applications

• PV inverter, converter and industrial motor drives
• Smart grid transmission and distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Win Source Part Number: 1170100-MSC035SMA170B4
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Power Dissipation (Max): 370W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Other Names: 150-MSC035SMA170B4
Drive Voltage (Max Rds On, Min Rds On): 20V