Features
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 150C
Fast and reliable body diode
RoHS Compliant
Benefits
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
Applications
Photovoltaic (PV) inverter, converter and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
Power supply and distribution
Request a Quote
Email Supplier
Description
Features
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 150C
Fast and reliable body diode
RoHS Compliant
Benefits
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
Applications
Photovoltaic (PV) inverter, converter and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
Power supply and distribution
Request a Quote
Email Supplier
Datasheet
Datasheet Summary Powered by GS/AI
The MSC025SMA330B4N is a 3300V, 25 mΩ typical, silicon carbide N-channel MOSFET in a TO-247 notched 4-lead package with a source sense terminal, weighing 6.2 g. It features a maximum junction temperature of 150 °C, a drain-source on-resistance of 25 mΩ at V<sub>GS</sub> = 20V and I<sub>D</sub> = 40A, and a continuous drain current of 106 A at 25 °C. The device has a gate-source threshold voltage ranging from 1.9 to 5.0 V and a gate-source leakage current of ±100 nA. Its reverse recovery charge is 1801 nC, and the body diode forward voltage is 3.5 V at 40 A. The MOSFET meets RoHS compliance and has a junction-to-case thermal resistance of 0.12 to 0.16 °C/W. Mounting torque for the M3 heat sink screw is 0.8 N·m.
Datasheet Summary Powered by GS/AI
The MSC025SMA330B4N is a 3300V, 25 mΩ typical, silicon carbide N-channel MOSFET in a TO-247 notched 4-lead package with a source sense terminal, weighing 6.2 g. It features a maximum junction temperature of 150 °C, a drain-source on-resistance of 25 mΩ at V<sub>GS</sub> = 20V and I<sub>D</sub> = 40A, and a continuous drain current of 106 A at 25 °C. The device has a gate-source threshold voltage ranging from 1.9 to 5.0 V and a gate-source leakage current of ±100 nA. Its reverse recovery charge is 1801 nC, and the body diode forward voltage is 3.5 V at 40 A. The MOSFET meets RoHS compliance and has a junction-to-case thermal resistance of 0.12 to 0.16 °C/W. Mounting torque for the M3 heat sink screw is 0.8 N·m.
Features
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 150C
Fast and reliable body diode
RoHS Compliant
Benefits
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
Applications
Photovoltaic (PV) inverter, converter and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
Power supply and distribution
Features
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 150C
Fast and reliable body diode
RoHS Compliant
Benefits
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
Applications
Photovoltaic (PV) inverter, converter and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
