Microchip Technology, Inc. Silicon Carbide MOSFETs MSC025SMA330B4N

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable body diode RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications Photovoltaic (PV) inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger Power supply and distribution
Request a Quote Datasheet
Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable body diode RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications Photovoltaic (PV) inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC025SMA330B4N
Silicon Carbide MOSFETs MSC025SMA330B4N
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable body diode RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications Photovoltaic (PV) inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 150C
  • Fast and reliable body diode
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • Photovoltaic (PV) inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
  • Power supply and distribution
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC025SMA330B4N
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0250 ohms
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