NXP Semiconductors RF Power Transistor MMRF1320GNR1

Description
This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows wide frequency range utilization, from 1.8 to 600 MHz.
Request a Quote Datasheet
Description
This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows wide frequency range utilization, from 1.8 to 600 MHz.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MMRF1320GNR1 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MMRF1320GNR1
RF Power Transistor MMRF1320GNR1
This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows wide frequency range utilization, from 1.8 to 600 MHz.

This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows wide frequency range utilization, from 1.8 to 600 MHz.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMRF1320GNR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMRF1320GNR1
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Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors RF Transistors
Product Number MMRF1320GNR1 MMRF1320GNR1
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Plastic Gull Wing Surface Mount
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